Recently, some SiC power devices such as Schottky-barrier diodes (SBDs), metal-oxide-semiconductor field-effect-transistors (MOSFETs), junction FETs (JFETs), and their integrated modules have come onto the market. However, to stably supply them and reduce their cost, further improvements for material characterizations and those for device processing are still necessary. This book abundantly describes recent technologies on manufacturing, processing, characterization, modeling, and so on for SiC devices. In particular, for explanation of technologies, I was always careful to argue physics underlying the technologies as much as possible. If this book could be a little helpful to progress of SiC devices, it will be my unexpected happiness.
- 418 pages
- English
- PDF
- Available on iOS & Android
eBook - PDF
Physics and Technology of Silicon Carbide Devices
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Topic
Physical SciencesSubtopic
Physical & Theoretical ChemistryTable of contents
- Physics and Technology of Silicon Carbide Devices
- Contents
- Preface
- Section 1 Characterization for Device Application
- Section 2 Device Processing
- Section 3 MOS Processing and Characterizations
- Section 4 SiC Devices
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Yes, you can access Physics and Technology of Silicon Carbide Devices by Yasuto Hijikata in PDF and/or ePUB format, as well as other popular books in Physical Sciences & Physical & Theoretical Chemistry. We have over 1.5 million books available in our catalogue for you to explore.