Compound Semiconductors 1998 explores research and development in key semiconductor materials and III-V compounds such as gallium arsenide, indium phosphide, gallium nitride, silicon germanium, and silicon carbide. It critically assesses progress in key technologies such as reliability assessment and reports on advances in the use of semiconductors in modern electronic and optoelectronic devices. Coverage in this volume reflects the increased interest and research funding in nitride-based materials; wide band-gap devices; mobile communications, including III-V-based transistors and photonic devices; crystal growth and characterization; and nanoscale phenomena, such as quantum wires, dots, and other low dimensional structures.

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Yes, you can access Compound Semiconductors 1998 by H Sakaki, J.C. Woo, N Yokoyama, Y Harayama, H Sakaki,J.C. Woo,N Yokoyama,Y Harayama in PDF and/or ePUB format, as well as other popular books in Physical Sciences & Physics. We have over one million books available in our catalogue for you to explore.

Information

Publisher

Year

Print ISBN

eBook ISBN

Edition

Topic

Physical Sciences

Subtopic

Physics

Index

Physics

Cover
Half Title
Series Page
Title Page
Copyright Page
International Symposium on Compound Semiconductors Award and Heinrich Welker Gold Medal
Young Scientist Award
Preface
Sponsors
Symposium Committees
Acknowledgments
Contents
Chapter 1: Review Papers
Chapter 2: Optoelectronic Devices and OEICs
Chapter 3: Long-Wavelength and Intersubband Transition
Chapter 4: Optical Properties
Chapter 5: Field Effect Transistors (FETs and HEMTs)
Chapter 6: Hetero-Bipolar Transistors (HBTs)
Chapter 7: Semiconductor Device Physics
Chapter 8: Quantum Wires
Chapter 9: Quantum Dots
Chapter 10: Material Growth
Chapter 11: Material Characterization
Chapter 12: Material Growth and Characterization (Wide Gap and Nitride)
Chapter 13: Doping and Processing
Chapter 14: Late News
Subject Index
Author Index

About this book

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