Silicon Carbide — 1968

Proceedings of the International Conference on Silicon Carbide, University Park, Pennsylvania, October 20-23, 1968

H. K. Henisch, R. Roy

• Publisher: Pergamon
• Year: 2013
• Print ISBN:
  9780080067681
• eBook ISBN:
  9781483152615
• Topic: Physical Sciences
• Subtopic: Chemistry
• Index: Chemistry

Silicon Carbide — 1968 presents the proceedings of the International Conference on Silicon Carbide held in University Park, Pennsylvania on October 20-23, 1968. The book covers papers about the perspectives on silicon carbide; several problems in the development of silicon carbide semiconductors, such as the control of crystal structure and analysis. The thermal properties of beta-silicon carbide from 20 to 2000 degrees and the influence of impurities on the growth of silicon carbide crystals in chemical reactions and by recrystallization are also discussed. The book then presents papers about silicon carbide single crystal growth using the Norton process; the principles of solution and traveling solvent growth of silicon carbide; the growth of silicon carbide from cobalt-silicon solutions; and the growth of silicon carbide from vapor by the Bridgman-Stockbarger method. Papers about the growth of crystals and epitaxial layers of beta silicon carbide; the heteroepitaxy of beta-silicon carbide employing liquid metals; some aspects of disorder in silicon carbide; and the dependence of physical properties on polytype structure are also considered. The book describes topics about the optical properties of polytypes of silicon carbide as well as the phase stability of silicon carbide against nitrogen. Other papers about the physical and electronic properties of silicon carbide are also discussed in the book. People involved in semiconductor industries will find the book helpful.

Table of contents

• Front Cover
• Silicon Carbide – 1968
• Copyright Page
• Table of Contens
• OPENING REMARKS
• CHAPTER 1. PERSPECTIVES ON SILICON CARBIDE
• CHAPTER 2. PROBLEMS IN SILICON CARBIDE DEVICE DEVELOPMENT
• CHAPTER 3. THERMAL PROPERTIES OF β-SILICON CARBIDE FROM 20 TO 2000°C
• CHAPTER 4. THE INFLUENCE OF IMPURITIES ON THE GROWTH OF SILICON CARBIDE CRYSTALS GROWN BY GAS-PHASE REACTIONS
• CHAPTER 5. THE INFLUENCE OF IMPURITIES ON THE GROWTH OF SILICON CARBIDE CRYSTALS BY RECRYSTALLIZATION
• CHAPTER 6. SOME OBSERVATIONS ON SILICON CARBIDE SINGLE CRYSTAL GROWTH
• CHAPTER 7. PRINCIPLES OF SOLUTION AND TRAVELLING SOLVENT GROWTH OF SILICON CARBIDE
• CHAPTER 8. GROWTH OF SILICON CARBIDE FROM SOLUTION
• CHAPTER 9. THE GROWTH OF SiC CRYSTALS FROM VAPOR BY THE BRIDGMAN-STOCKBARGER METHOD
• CHAPTER 10. BETA SILICON CARBIDE
• CHAPTER 11. HETEROEPITAXY OF BETA SILICON CARBIDE EMPLOYING LIQUID METALS
• CHAPTER 12. SOME ASPECTS OF DISORDER IN SILICON CARBIDE
• CHAPTER 13. DEPENDENCE OF PHYSICAL PROPERTIES ON POLYTYPE STRUCTURE
• CHAPTER 14. OPTICAL PROPERTIES OF POLYTYPES OF SiC: INTERBAND ABSORPTION, AND LUMINESCENCE OF NITROOEN-EXCITON COMPLEXES
• CHAPTER 15. PHASE STABILITY OF SILICON CARBIDE IN THE TERNARY SYSTEM Si-C-N
• CHAPTER 16. ELECTRONIC STRUCTURE AND OPTICAL SPECTRUM OF SILICON CARBIDE
• CHAPTER 17. FABRICATION OF SILICON CARBIDE LIGHT EMITTING DIODES
• CHAPTER 18. THE FABRICATION OF SiC ELECTROLUMINESCENT DISMAYS
• CHAPTER 19. THE ETCHING OF SILICON CARBIDE
• CHAPTER 20. ELECTRICAL PROPERTIES OF SiC DEVICES
• CHAPTER 21. PHOTOLUMINESCENCE AND ELECTROLUMINESCENCE IN ALPHA SILICON CARBIDE
• CHAPTER 22. LUMINESCENCE OF SILICON CARBIDE WITH DIFFERENT IMPURITIES
• CHAPTER 23. THE TEMPERATURE DEPENDENCE OF PHOTOELECTRIC EFFECTS IN SILICON CARBIDE
• CHAPTER 24. THE E.S.R. PROPERTIES OF ELECTRON IRRADIATED HEXAGONAL AND CUBIC SILICON CARBIDE
• CHAPTER 25. MAGNETIC RESONANCE IN 6H SiC
• CHAPTER 26. ACTIVATION ANALYSIS OF THE IMPURITIES IN SILICON CARBIDE
• CHAPTER 27. THE EPITAXIAL GROWTH OF BETA SILICON CARBIDE
• CHAPTER 28. THE PROPERTIES OF SOME SiC ELECTROLUMINESCENT DIODES
• CHAPTER 29. SILICON CARBIDE COED CATHODES
• CHAPTER 30. FORMATION OF CRISTOBALITE FROM SILICON CARBIDE
• CHAPTER 31. EQUILIBRIUM COMPUTATIONS ON THE C-Cl-H-Si SYSTEM
• CHAPTER 32. SILICON CARBIDE AS A FISSION PRODUCT BARRIER IN NUCLEAR FUELS
• CHAPTER 33. EPITAXIAL GROWTH OF β-SILICON CARBIDE
• CHAPTER 34. ELECTRONIC PROPERTIES OF N-TYPE β-SILICON CARBIDE CRYSTALS GROWN FROM SOLUTION
• NUMERICAL DATA
• AUTHOR INDEX