Basic Principles of Electronics

Volume 2: Semiconductors

J. Jenkins, W. H. Jarvis, W. Ashhurst

• Publisher: Pergamon
• Year: 2014
• Print ISBN: 9780080161181
• eBook ISBN: 9781483186672
• Topic: Technology & Engineering
• Subtopic: Physics
• Index: Physics

Basic Principles of Electronics, Volume 2: Semiconductors focuses on the properties, applications, and characteristics of semiconductors. The publication first elaborates on conduction in the solid state, conduction and heat, and semiconductors. Discussions focus on extrinsic or impurity semiconductors, electrons and holes, effect of temperature on the conductivity, mean free path, Joule heating effect, "vacancies" in crystals, and Drude's theory of metallic conduction. The text then ponders on semiconductor technology and simple devices, transistor, and transistor production and characteristics. Topics include strain gauges, thermistors, thermoelectric semiconductors, crystal preparation, photoconductors, and the Hall effect. The book elaborates on special devices, processes, and uses, common transistor circuitry, and a low-frequency equivalent circuit for common base, including radiation detection, optoelectronics, field effect transistors, sonar amplifier, oscillators, and multi-stage amplifiers. The publication is highly recommended for technical college students and researchers wanting to study semiconductors.

Table of contents

• Front Cover
• Semiconductors
• Copyright Page
• Table of Contents
• Dedication
• PREFACE
• CHAPTER 1. CONDUCTION IN THE SOLID STATE
• CHAPTER 2. CONDUCTION AND HEAT
• CHAPTER 3. SEMICONDUCTORS
• CHAPTER 4. SEMICONDUCTOR TECHNOLOGY AND SIMPLE DEVICES
• CHAPTER 5. THE p–n JUNCTION
• CHAPTER 6. p–n JUNCTION DEVICES
• CHAPTER 7. THE TRANSISTOR
• CHAPTER 8. TRANSISTOR PRODUCTION AND CHARACTERISTICS
• CHAPTER 9. THE TRANSISTOR AS A CIRCUIT ELEMENT
• CHAPTER 10. COMMON TRANSISTOR CIRCUITRY
• CHAPTER 11. SPECIAL DEVICES, PROCESSES AND USES
• APPENDIX I: THE h-PARAMETERS
• APPENDIX II: RELATIONSHIP BETWEEN h AND T PARAMETERS FOR COMMON EMITTER CONFIGURATION
• APPENDIX III: INPUT AND OUTPUT RESISTANCES AND GAINS FOR GROUNDED EMITTER TRANSISTOR, IN TERMS OF h-PARAMETERS
• APPENDIX IV: CLASSIFICATION OF SEMICONDUCTOR TYPES
• APPENDIX V: PRACTICAL PRECAUTIONS WITH TRANSISTORS
• APPENDIX VI: SYMBOLS USED IN THE TEXT
• APPENDIX VII: IMPURITY SEMICONDUCTORS
• BIBLIOGRAPHY
• INDEX TO SECTIONS