Low-Power Wireless Communication Circuits and Systems

60GHz and Beyond

Kiat Seng Yeo, Kaixue Ma

• Editorial: Jenny Stanford Publishing
• Año: 2018
• ISBN:
  9781351645171
• Edición: 1
• Categoría: Computer Science
• Categoría: Computer Networking

The increasing demand for extremely high-data-rate communications has urged researchers to develop new communication systems. Currently, wireless transmission with more than one Giga-bits-per-second (Gbps) data rates is becoming essential due to increased connectivity between different portable and smart devices. To realize Gbps data rates, millimeter-wave (MMW) bands around 60 GHz is attractive due to the availability of large bandwidth of 9 GHz.

Recent research work in the Gbps data rates around 60 GHz band has focused on short-range indoor applications, such as uncompressed video transfer, high-speed file transfer between electronic devices, and communication to and from kiosk. Many of these applications are limited to 10 m or less, because of the huge free space path loss and oxygen absorption for 60 GHz band MMW signal.

This book introduces new knowledge and novel circuit techniques to design low-power MMW circuits and systems. It also focuses on unlocking the potential applications of the 60 GHz band for high-speed outdoor applications. The innovative design application significantly improves and enables high-data-rate low-cost communication links between two access points seamlessly. The 60 GHz transceiver system-on-chip provides an alternative solution to upgrade existing networks without introducing any building renovation or external network laying works.

Contents

Preface

Acknowledgments

1. Introduction

Kaixue Ma and Kiat Seng Yeo

1.1 Background and Motivation

1.2 Contributions

1.3 Scope and Organization

2. Fundamentals of Circuit Networks

Wei Xu, Kaixue Ma, and Kiat Seng Yeo

2.1 Introduction

2.2 Two-Port Scattering Matrix

2.3 Two-Port Z Matrix

2.4 Two-Port Y Matrix

2.5 Two-Port ABCD Matrix

2.6 Network Connections

2.7 Network Conversions

2.8 Resonant Network

2.9 Even-Odd Mode Analysis

2.10 Multi-Port Network

3. Active Devices

Bharatha Kumar Thangarasu, Kaixue Ma, and Kiat Seng Yeo

3.1 Diode

3.2 Transistor

3.2.1 Transistor Design Consideration for RF and Millimeter-Wave Frequency Applications

3.3 BJT versus MOS Transistors and Hybrid Use

4. Passive Elements

Yongqiang Wang, Kaixue Ma, and Kiat Seng Yeo

4.1 Introduction

4.2 Resistor

4.3 Capacitor

4.3.1 MIM Capacitors

4.3.2 Interdigital Capacitors

4.4 Inductor

4.5 Transformer

4.6 Interconnects

4.7 Transmission Lines

5. Variable Gain Amplifier

Bharatha Kumar Thangarasu, Kaixue Ma, and Kiat Seng Yeo

5.1 Introduction

5.2 VGA Design Analysis

5.2.1 dB-Linearity

5.2.2 DC Offset Cancellation

5.3 Variable Gain Amplifier Examples

5.3.1 VGA1: Based on 0.18 SiGe BiCMOS Programmable Gain Amplifier Design

5.3.2 VGA2: Based on 65 nm CMOS Variable Gain Amplifier Design

6. Power Amplifier

Bharatha Kumar Thangarasu, Kaixue Ma, and Kiat Seng Yeo

6.1 Introduction

6.2 PA Design Analysis

6.2.1 Amplifier Linearity versus Power Added Efficiency

6.3 Power Amplifier Examples

6.3.1 PA1: Differential Drive Amplifier Based on Variable Gain Control and Frequency-Tunable Load

6.3.1.1 Variable gain amplifier stage analysis (Av1)

6.3.1.2 Frequency-tunable amplifier stage analysis (AV2)

6.3.1.3 Frequency-tunable load design

6.3.1.4 Q-factor enhancement

6.3.2 PA2: Single-Ended Transformer-Based Power Amplifier

7. Low-Noise Amplifier

Bharatha Kumar Thangarasu, Kaixue Ma, and Kiat Seng Yeo

7.1 Introduction

7.2 LNA Design Analysis

7.2.1 Noise Figure

7.2.2 Linearity

7.2.3 Variable Gain LNA as a Trade-Off between Low Noise and Good Linearity Performance

7.3 Low-Noise Amplifier Examples

7.3.1 LNA1: Based on 65 nm CMOS with Custom-Built Inductor

7.3.1.1 Marginally stable criteria and gain boosting

7.3.1.2 Unstable criteria causing oscillations

7.3.1.3 Unconditionally stable criteria

7.3.2 LNA2: Based on 0.18 μm SiGe BiCMOS with Distributive Transmission Line Inductor and Interconnect Design

8. Bi-Directional Low-Noise Amplifier

Bharatha Kumar Thangarasu, Kaixue Ma, and Kiat Seng Yeo

8.1 Introduction

8.2 BDA Design Analysis

8.2.1 Signal Flow Direction Switch Control

8.2.2 Interconnect Network Design

8.3 Bi-Directional Low-Noise Amplifier Examples

8.3.1 BDA1—Based on 65 nm CMOS with Custom-Built Inductor and Micro-Strip Line Three-Port Interconnect Network

8.3.2 BDA2—Based on 0.18 SiGe BiCMOS with Distributive Transmission Line Inductor and Interconnect Network Design

9. Millimeter-Wave Mixer

Shouxian Mou, Kaixue Ma, and Kiat Seng Yeo

9.1 Mixer Fundamentals

9.1.1 Basic Mixer Operation

9.1.2 Controlled Transconductance Mixer

9.1.3 Transconductor Implementation

9.1.4 The Issue of Balance in Mixers

9.2 Fundamental Mixers

9.2.1 FET Resistive Mixer

9.2.2 Gilbert Cell

9.2.3 Gilbert Cell-Based Mixer

9.2.4 Some Techniques Used in Gilbert Cell-Based Mixers

9.3 Sub-Harmonic Mixers

9.3.1 LO Self-Mixing

9.3.2 Anti-Parallel Diode Pair

9.3.3 Techniques Used in Sub-Harmonic APDP Mixer

9.3.4 Topology of Transistor-Based Sub-Harmonic Mixer

9.3.5 Operation Mechanism of the Transistor-Based 2 × HM

9.3.6 A 60 GHz Transistor-Based 2 × Sub-Harmonic Modulator

9.3.7 Some Techniques Used in Sub-harmonic Mixer Designs

9.3.8 The 4× Sub-Harmonic Mixer

9.4 Summary

10. Voltage-Controlled Oscillator

Zou Qiong, Kaixue Ma, and Kiat Seng Yeo

10.1 VCO Basics

10.1.1 Overview of VCO Architectures

10.1.2 Oscillator Theory

10.1.3 Performance Parameter

10.2 LC-Tank

10.2.1 Quality Factor

10.2.2 Tank Components

10.3 LC-VCO Topologies for Millimeter-Wave Frequency

10.3.1 Cross-Coupled LC-VCO

10.3.2 Colpitts VCO

10.4 Summary

11. Microwave and Millimeter-Wave Switches

Fanyi Meng, Kaixue Ma, and Kiat Seng Yeo

11.1 CMOS FET Transistor

11.2 SPDT Switches Based on A_g/4 T-line Topology

11.3 SP...