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High-Frequency Integrated Circuits
About this book
A transistor-level, design-intensive overview of high speed and high frequency monolithic integrated circuits for wireless and broadband systems from 2 GHz to 200 GHz, this comprehensive text covers high-speed, RF, mm-wave and optical fiber circuits using nanoscale CMOS, SiGe BiCMOS and III-V technologies. Step-by-step design methodologies, end-of-chapter problems and practical simulation and design projects are provided, making this an ideal resource for senior undergraduate and graduate courses in circuit design. With an emphasis on device-circuit topology interaction and optimization, it gives circuit designers and students alike an in-depth understanding of device structures and process limitations affecting circuit performance.
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Yes, you can access High-Frequency Integrated Circuits by Sorin Voinigescu in PDF and/or ePUB format, as well as other popular books in Technology & Engineering & Microwaves. We have over one million books available in our catalogue for you to explore.
Information
1.2.2
Silicon
bipolar,
SiGe
BiCMOS
and
CMOS
RF,
and
fiber-optic
ICs
At
the
time
of
the
first
MMIC,
the
fastest
silicon
bipolar
transistors
had
cutoff
frequencies
of
2GHz,
the
physical
gate
length
of
silicon
MOSFETs
was
larger
than
5
μ
m
and
comple-
mentary
CMOS
logic
was
just
being
introduced.
More
than
15
years
would
pass
before
the
first
silicon
bipolar
and
BiCMOS
processes
with
transistor
f
T
and
f
MAX
larger
than
10GHz
became
commercially
available.
However,
the
main
roadblock
in
realizing
the
first
silicon
RFICs
or
MMICs
was
not
so
much
the
transistor
speed,
but
rather
achieving
acceptable
quality
factors
for
inductors
integrated
on
silicon.
Although
for
several
decades,
even
today,
a
large
effort
has
been
dedicated
to
adopting
high-resistivity
silicon
substrates
in
Figure
1.3
The
first
MMIC:
X-Band
(8
–
12GHz)
LNA
from
Plessey
[
3
]
BIAS
BIAS
IN
IN
IN
IN
400
m
400
m
40
m
60
m
120
m
500
m
120
m
40
m
80
m
OUT
OUT
OUT
V
DD
V
DD
V
DD
V
SS
V
SS
V
SS
13
nH
DC
SENSE
DC
SENSE
(a)
(b)
(c)
GAIN
(dB)
A21
A40
A60
20
10
0
0.3
1.0
2
3
5
FREQ.
(GHz)
10
Figure
1.4
The
first
GaAs
MESFET
broadband
amplifiers
[
4
]
6
Introduction
Table of contents
- Contents
- Preface
- 1 Introduction
- 2 High-frequency and high-data-rate communication systems
- 3 High-frequency linear noisy network analysis
- 4 High-frequency devices
- 5 Circuit analysis techniques for high-frequency integrated circuits
- 6 Tuned power amplifier design
- 7 Low-noise tuned amplifier design
- 8 Broadband low-noise and transimpedance amplifiers
- 9 Mixers, switches, modulators, and other control circuits
- 10 Design of voltage-controlled oscillators
- 11 High-speed digital logic
- 12 High-speed digital output drivers with waveshape control
- 13 SoC examples
- Appendix 1 Trigonometric identities
- Appendix 2 Baseband binary data formats and analysis
- Appendix 3 Linear matrix transformations
- Appendix 4 Fourier series
- Appendix 5 Exact noise analysis for a cascode amplifier with inductive degeneration
- Appendix 6 Noise analysis of the common-emitter amplifier with transformer feedback
- Appendix 7 Common-source amplifier with shunt-series transformer feedback
- Appendix 8 HiCUM level 0 model for a SiGe HBT
- Appendix 9 Technology parameters
- Appendix 10 Analytical study of oscillator phase noise
- Appendix 11 Physical constants
- Appendix 12 Letter frequency bands
- Index