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High-Frequency Integrated Circuits
Sorin Voinigescu
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High-Frequency Integrated Circuits
Sorin Voinigescu
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About This Book
A transistor-level, design-intensive overview of high speed and high frequency monolithic integrated circuits for wireless and broadband systems from 2 GHz to 200 GHz, this comprehensive text covers high-speed, RF, mm-wave and optical fiber circuits using nanoscale CMOS, SiGe BiCMOS and III-V technologies. Step-by-step design methodologies, end-of-chapter problems and practical simulation and design projects are provided, making this an ideal resource for senior undergraduate and graduate courses in circuit design. With an emphasis on device-circuit topology interaction and optimization, it gives circuit designers and students alike an in-depth understanding of device structures and process limitations affecting circuit performance.
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Subtopic
Mikrowellen1.2.2
Silicon
bipolar,
SiGe
BiCMOS
and
CMOS
RF,
and
fiber-optic
ICs
At
the
time
of
the
first
MMIC,
the
fastest
silicon
bipolar
transistors
had
cutoff
frequencies
of
2GHz,
the
physical
gate
length
of
silicon
MOSFETs
was
larger
than
5
Ī¼
m
and
comple-
mentary
CMOS
logic
was
just
being
introduced.
More
than
15
years
would
pass
before
the
first
silicon
bipolar
and
BiCMOS
processes
with
transistor
f
T
and
f
MAX
larger
than
10GHz
became
commercially
available.
However,
the
main
roadblock
in
realizing
the
first
silicon
RFICs
or
MMICs
was
not
so
much
the
transistor
speed,
but
rather
achieving
acceptable
quality
factors
for
inductors
integrated
on
silicon.
Although
for
several
decades,
even
today,
a
large
effort
has
been
dedicated
to
adopting
high-resistivity
silicon
substrates
in
Figure
1.3
The
first
MMIC:
X-Band
(8
ā
12GHz)
LNA
from
Plessey
[
3
]
BIAS
BIAS
IN
IN
IN
IN
400
m
400
m
40
m
60
m
120
m
500
m
120
m
40
m
80
m
OUT
OUT
OUT
V
DD
V
DD
V
DD
V
SS
V
SS
V
SS
13Ā
nH
DC
SENSE
DC
SENSE
(a)
(b)
(c)
GAIN
(dB)
A21
A40
A60
20
10
0
0.3
1.0
2
3
5
FREQ.Ā
(GHz)
10
Figure
1.4
The
first
GaAs
MESFET
broadband
amplifiers
[
4
]
6
Introduction