Handbook of Thin Film Process Technology
eBook - ePub

Handbook of Thin Film Process Technology

98/2 Recipes for Optical Materials

  1. 135 pages
  2. English
  3. ePUB (mobile friendly)
  4. Available on iOS & Android
eBook - ePub

Handbook of Thin Film Process Technology

98/2 Recipes for Optical Materials

About this book

The Handbook of Thin Film Process Technology is a practical handbook for the thin film scientist, engineer and technician. This handbook is regularly updated with new material, and this volume presents additional recipe-type information (i.e. important deposition system details and process parameters) for optical materials.

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Yes, you can access Handbook of Thin Film Process Technology by D Glocker in PDF and/or ePUB format, as well as other popular books in Physical Sciences & Physics. We have over one million books available in our catalogue for you to explore.

Information

Publisher
CRC Press
Year
2018
Print ISBN
9781315893693
eBook ISBN
9781351089692

Index

II-VI semiconductor superlattices F6.2:1
III-V compound D1.0:2, D1.0:8, D2.1:3, D2.4:5
III-V compound semiconductors B1.1:1, B1.1:12, D1.2:1, D2.0:1
III-V films A2.2:17 III-V materials B1.4:34
III-V semiconductor D2.1:1
III-V semiconductor superlattices F6.2:1
III-V substrates A2.2:17
IV-VI semiconductor superlattices F6.2:1
ALE of covalent (elemental) materials B1.5:2
ALE processing B1.5:3
ALE sequences B1.5:1
Abeyant sheath A3.1:17
Ablation lasers A1.5:2
Ablative photo-decomposition (APD) A1.5:2
Abnormal glow A3.0:2
Absorption D2.4:1
Absorption index F5:9
AC sputtering A5.2:2, A5.2:7
reactive A5.2:2
Acceptor D2.4:5
transitions D2.4:5
Acoustic impedance D4.0:2
Activation energy B1.5:4, B1.5:5, B1.5:7, F7:11
Activation energy barrier A2.3:2
Active storage environments E1.0:19
Adatom incorporation D1.0:5
Adatom migration D1.0:7
Additive C1.0:5
ALE growth B1.5:6
pattern transfer C 1.0:3
Adhesion B1.2:5, B1.2:9, D0:2, E3.0:4
enhancement E3.0:5, E3.0:10-12
failure B1.2:9
strength E3.1:19
Adiabatic temperature F7:9
Afterglow reactors B1.2:11
Aksenov device A1.4:12
AlxGa1-xAs D1.2:2, D1.2:3, D2.3:4
AlAs A2.0:17, D2.3:5
AlAsxSb1-x D1.2:3
AlAs/GaAs superlattice D2.3:5
(Al, Ga)As A2.0:2
AlGaAs A2.0:17, A2.1:7, A2.3:5
AlInAs A2.0:17
AlSb A2.0:17
Alarm system A2.2:15
Alkaline cleaners E1.0:6
Alkane-based plasma chemistries Cl. 1:14
Allotropic forms A2.2:3
Alloy clustering D2.4:7
Alloy composition D0:6, D0:9, D1.2:1, D1.2:3, D2.0:3, D2.0:6, D2.3:4, D2.4:1
Alloy content D0:2
Alloy decomposition F1:7
Alloy reduced energy E2.2:9
Alternating current (AC) A5.2:1
Ambipolar diffusion A3.1:4, B1.2:13
Amorphous hydrogenated carbon films (a-C:H) X3.15:1
Amorphous hydrogenated oxygenated carbon films (a-C:O:H) X3.15:1
Amorphous thin films X3.5:9
Amperian sheet currents A3.2:5
Ancillary magnetic fields A3.2:21
Angle-resolved XPS (ARXPS) E3.1:11, E3.1:13, E3.1:18
Angular dependence of etch yields C1.2:3
Anisitropic etching C1.0:7, C1.1:3, C1.1:11
Anisotropic magnetoresistance (AMR) X5.0:14
Anisotropy C1.1:1
Antiphase domains A2.0:30
Antiphase boundaries D1.0:3
Arc evaporation A1.4:1
Arc evaporation sources A1.4:7
ac A1.4:7
dc A1.4:7
filtered A1.4:7
pulsed A1.4:7
steered A1.4:7
Arc lamps B1.3:9
Argon (Ar) ion laser B1.3:11, D2.4:2
Arrhenius analysis F7:11
Arrival rate ratio A1.0:2
Arsine A2.2:1
As–As dimer D1.0:3
Aspect ratio C1.0:5, C1.0:6
Asperities D1.0:4
At rates B1.3:5
Atmospheric pressure glow discharge (APGD) E3.0:5, E3.0:30, E3.0:34
Atom diagnostics D0:2
Atomic absorption spectroscopy D0:3, D0:5, D0:6
Atomic arrangement of the surface D1.0:1
Atomic beams A2.0:1
Atomic bond energy F7:5
Atomic configurations D0:4
Atomic diffusion F7:8
Atomic intermixing F7:3
Atomic layer epitaxy A2.0:1
Atomic scattering factors F5:1, F5:2
Atomically abrupt interfaces A2.2:17
Auger electron spectroscopy (AES) D0:6
Automation A4.1:8
Available wavelength B1.3:11
Avalanche photodiodes F6.2:1
Average ion energy A1.4:2
Backscattering C1.0:8
Baffled furnace sources A1.1:4
Balanced and unbalanced magnetron fields A3.2:9
Bandgap D0:2, D0:3, D0:9, D2.4:1, D2.4:2
energy D2.4:7
engineering F6.0:11
Band-to-band transition D2.4:1, D2.4:5
Bar sources A1.1:4
Barriers to incorporation D1.0:7
Basic sections A1.2:1
Be dopant A2.3:6
Bias sputtering A3.0:1
Bia...

Table of contents

  1. Cover Page
  2. Title Page
  3. Copyright Page
  4. X3.2 ZnO
  5. X3.5 TiO2
  6. In2O3:Sn
  7. X3.7 Ga2O3-In2O3
  8. X3.8 ZrO2
  9. X3.9 ZrOxFy
  10. X3.10 CeO2
  11. X3.11 CaF2
  12. X3.12 MgF2
  13. X3.13 MgO
  14. X3.14 VO2
  15. X3.15 a-C:O:H
  16. X3.16 SiO2
  17. X3.17 Ta2O5
  18. X3.18 SiO2/Si3N4/TiO2/Ag
  19. X3.19 Cr/Si3N4
  20. X3.20 HfO2
  21. Appendix A: List of Contributors
  22. Index