- 430 pages
- English
- ePUB (mobile friendly)
- Available on iOS & Android
eBook - ePub
About this book
This book focusses on III-V high electron mobility transistors (HEMTs) including basic physics, material used, fabrications details, modeling, simulation, and other important aspects. It initiates by describing principle of operation, material systems and material technologies followed by description of the structure, I-V characteristics, modeling of DC and RF parameters of AlGaN/GaN HEMTs. The book also provides information about source/drain engineering, gate engineering and channel engineering techniques used to improve the DC-RF and breakdown performance of HEMTs. Finally, the book also highlights the importance of metal oxide semiconductor high electron mobility transistors (MOS-HEMT).
Key Features
- Combines III-As/P/N HEMTs with reliability and current status in single volume
- Includes AC/DC modelling and (sub)millimeter wave devices with reliability analysis
- Covers all theoretical and experimental aspects of HEMTs
- Discusses AlGaN/GaN transistors
- Presents DC, RF and breakdown characteristics of HEMTs on various material systems using graphs and plots
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Please note we cannot support devices running on iOS 13 and Android 7 or earlier. Learn more about using the app.
Yes, you can access Handbook for III-V High Electron Mobility Transistor Technologies by D. Nirmal, J. Ajayan, D. Nirmal,J. Ajayan in PDF and/or ePUB format, as well as other popular books in Physical Sciences & Physics. We have over one million books available in our catalogue for you to explore.
Information
Table of contents
- Cover
- Half Title
- Title Page
- Copyright Page
- Table of Contents
- Preface
- Editors
- Contributors
- 1. Motivation Behind High Electron Mobility Transistors
- 2. Introduction to High Electron Mobility Transistors
- 3. HEMT Material Technology and Epitaxial Deposition Techniques
- 4. Source/Drain, Gate and Channel Engineering in HEMTs
- 5. AlGaN/GaN HEMTs for High Power Applications
- 6. AlGaN/GaN HEMT Fabrication and Challenges
- 7. Analytical Modeling of High Electron Mobility Transistors
- 8. Polarization Effects in AlGaN/GaN HEMTs
- 9. Current Collapse in AlGaN/GaN HEMTs
- 10. AlGaN/GaN HEMT Modeling and Simulation
- 11. Breakdown Voltage Improvement Techniques in AlGaN/GaN HEMTs
- 12. InP/InAlAs/InGaAs HEMTs for High Speed and Low Power Applications
- 13. A Study of the Elemental and Surface Characterization of AlGaN/GaN HEMT by Magnetron Sputtering System
- 14. Metamorphic HEMTs for Sub Millimeter Wave Applications
- 15. Metal Oxide Semiconductor High Electron Mobility Transistors
- 16. Double Gate High Electron Mobility Transistors
- Index