Digital Integrated Circuits

Analysis and Design, Second Edition

John E. Ayers

• Publisher: CRC Press
• Year: 2018
• Print ISBN: 9781420069877
• eBook ISBN: 9781000055061
• Topic: Technology & Engineering
• Subtopic: Computer Engineering
• Index: Technology & Engineering

Exponential improvement in functionality and performance of digital integrated circuits has revolutionized the way we live and work. The continued scaling down of MOS transistors has broadened the scope of use for circuit technology to the point that texts on the topic are generally lacking after a few years.

The second edition of Digital Integrated Circuits: Analysis and Design focuses on timeless principles with a modern interdisciplinary view that will serve integrated circuits engineers from all disciplines for years to come. Providing a revised instructional reference for engineers involved with Very Large Scale Integrated Circuit design and fabrication, this book delves into the dramatic advances in the field, including new applications and changes in the physics of operation made possible by relentless miniaturization.

This book was conceived in the versatile spirit of the field to bridge a void that had existed between books on transistor electronics and those covering VLSI design and fabrication as a separate topic. Like the first edition, this volume is a crucial link for integrated circuit engineers and those studying the field, supplying the cross-disciplinary connections they require for guidance in more advanced work.

For pedagogical reasons, the author uses SPICE level 1 computer simulation models but introduces BSIM models that are indispensable for VLSI design. This enables users to develop a strong and intuitive sense of device and circuit design by drawing direct connections between the hand analysis and the SPICE models.

With four new chapters, more than 200 new illustrations, numerous worked examples, case studies, and support provided on a dynamic website, this text significantly expands concepts presented in the first edition.

1

Introduction

1.1 Historical Perspective and Moore’s Law

Since the demonstration of the first transistor [1,,2,3,4] at Bell Laboratories in 1947 (Figure 1.1), rapid progress in the design and manufacture of semiconductors has led to gigahertz microprocessors and gigabit memories today. The invention of the integrated circuit (Figure 1.2) in 1958 [5, 6], and subsequent improvements on the concept in the 1960s, made it possible to combine multiple devices on a single chip of silicon instead of wiring together devices on a circuit board. Thus, it was possible to reduce the size, weight, and cost of a circuit even while increasing its functionality. These breakthroughs eventually allowed the fabrication of billions of transistors in a single chip of silicon, enabling computing power far beyond that achievable by wiring together discrete transistors. At the present time, state-of-the-art microprocessor chips contain hundreds of millions of transistors, whereas memory chips contain up to several billion transistors.

FIGURE 1.1
The first transistor, invented at Bell Laboratories in 1947. (From Lucent Technologies Inc./Bell Labs. With permission.)

FIGURE 1.2
The first commercial integrated circuit, developed by Robert Noyce at Fairchild Semiconductor. The integrated circuit was invented by Robert Noyce of Fairchild Semiconductor and Jack Kilby of Texas Instruments at about the same time. (From Fairchild Semiconductor. With permission.)

Soon after the realization of integrated circuits, Intel cofounder Gordon Moore noted that the complexity of integrated circuits was increasing exponentially with time. Moore stated that the “complexity” of integrated circuits with “minimum component costs” was doubling every 12 months [7]. Since that time, several variations of “Moore’s law” have been stated. Usually, it is noted that the number of transistors per microprocessor chip doubles every 24 months, whereas the number of bits per dynamic random access memory (DRAM) chip doubles every 18 months. Remarkably, this rate of progress has been maintained for more than three decades Figure 1.3 illustrates this exponential progress for microprocessors and DRAMs. Similar exponential trends have been established for flash memories and application-specific integrated circuits (ASICs). However, memory chips have outpaced microprocessors because of their simpler designs and built-in redundancy.

Industry has kept pace with Moore’s law primarily by scaling down the dimensions of transistors through improved lithography [8, 9], but chip size has also been increased. Transistor miniaturization has been pursued aggressively and has brought about improvements in circuit performance and cost as well as density. A key parameter describing this scaling is the “minimum feature size” for the transfer of circuit patterns from a computer design to the semiconductor wafer. Figure 1.4 shows the historical evolution of the minimum feature size, along with projections out to the year 2020. Historically, much of the progress shown in Figure 1.4 was achieved by decreasing the wavelength used in lithographic tools. However, at the present time, technical solutions for the lithographic requirements of 2020 and beyond have not been found.

FIGURE 1.3
According to Moore’s law, the complexity of integrated circuits has increased exponentially with time. Historically, the number of transistors per microprocessor unit (MPU) doubles every 24 months; the number of bits per DRAM chip doubles every 18 months.

With the goal of extending the historic trends in integrated circuit technology, the Semiconductor Industry Association in the United States [10] produced the National Technology Roadmap for Semiconductors in 1992. This roadmap defined industry-wide technology goals with a 15-year horizon and was revised in 1994 and 1997. In 1998, after the globalization of the semiconductor industry, an International Technology Roadmap for Semiconductors (ITRS) was developed with participation from the semiconductor industries in Europe, Japan, Korea, and Taiwan [11]. Full ITRS reports are published biannually, in odd years, and update reports are published in even years.

Each ITRS report projects industry trends 15 years into the future. What, then, is the digital integrated circuit industry expected to look like in 2020? According to the 2007 ITRS, the starting silicon wafers will grow to 450 mm in diameter, whereas transistor gate lengths will diminish to 5.6 nm. As a consequence of these developments, flash memory will be able to store one terabit on a single chip, and you will be able to purchase a 12.4 GHz processor with 6.1 billion transistors and 7902 pins for about 0.24 microcents per transistor These and other important trends are charted in Table 1.1.

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Table of contents

• Cover
• Half Title
• Title Page
• Copyright Page
• Dedication
• Table of Contents
• Preface
• About the Author
• 1. Introduction
• 2. Fabrication
• 3. Semiconductors and p-n Junctions
• 4. The MOS Transistor
• 5. MOS Gate Circuits
• 6. Static CMOS
• 7. Interconnect
• 8. Dynamic CMOS
• 9. Low-Power CMOS
• 10. Bistable Circuits
• 11. Digital Memories
• 12. Input/Output and Interface Circuits
• Appendix A List of Symbols
• Appendix B International System of Units
• Appendix C Unit Prefixes
• Appendix D Greek Alphabet
• Appendix E Physical Constants
• Appendix F Properties of Si and Ge at 300 K
• Appendix G Properties of SiO2 at 300 K
• Appendix H Important Equations
• Appendix I Design Rules
• Appendix J p-n Junction Switching Transients
• Appendix K Bipolar and BiCMOS Circuits
• Appendix L Integrated Circuit Package
• Index