Epitaxial Graphene on Silicon Carbide

Modeling, Characterization, and Applications

Gemma Rius, Philippe Godignon, Gemma Rius, Philippe Godignon

• Publisher: Jenny Stanford Publishing
• Year: 2018
• eBook ISBN: 9781351736213
• Topic: Physical Sciences
• Subtopic: Biology

This is the first book dedicated exclusively to epitaxial graphene on silicon carbide (EG-SiC). It comprehensively addresses all fundamental aspects relevant for the study and technology development of EG materials and their applications, using quantum Hall effect studies and probe techniques such as scanning tunneling microscopy and atomic resolution imaging based on transmission electron microscopy. It presents the state of the art of the synthesis of EG-SiC and profusely explains it as a function of SiC substrate characteristics such as polytype, polarity, and wafer cut as well as the in situ and ex situ conditioning techniques, including H2 pre-deposition annealing and chemical mechanical polishing. It also describes growth studies, including the most popular characterization techniques, such as ultrahigh-vacuum, partial-pressure, or graphite-cap sublimation techniques, for high-quality controlled deposition.

The book includes relevant examples on synthesis and characterization techniques as well as device fabrication processing and performance and complements them with theoretical modeling and simulation studies, which are helpful in the fundamental comprehension of EG-SiC substrates and their potential use in electronic applications. It addresses the fundamental aspects of EG-SiC using quantum Hall effect studies as well as probe techniques, such as scanning tunneling microscopy or atomic resolution imaging based on transmission electron microscopy. It comprises chapters that present reviews and vision on the current state of the art of experts in physics, electronic engineering, materials science, and nanotechnology from Europe and Asia.

Contents

Preface

1. Epitaxial graphene on SiC substrate: A view from a specialist of SiC growth and materials science

Gabriel Ferro

1.1 A brief history of carbon and SiC materials

1.1.1 History of Carbon Materials

1.1.1.1 Graphite and diamond

1.1.1.2 The carbon revolution

1.1.1.3 What after graphene?

1.1.2 History of SiC material

1.1.2.1 Discovery and first industrial production

1.1.2.2 Single crystal growth

1.1.2.3 Links and bridges between SiC and carbon materials

1.2 Introduction to SiC Material

1.2.1 SiC Crystallography

1.2.1.1 Polytypism

1.2.1.2 Polarity

1.2.2 Material Properties

1.2.2.1 Mechanical and chemical

1.2.2.2 Electrical and optical

1.2.2.3 Surface preparation and thin film epitaxy

1.3 Methods for Growth of Epitaxial Graphene on SiC

1.3.1 SiC graphitization

1.3.2 CVD of EG on SiC

1.4 Challenges and Perspectives

1.4.1 Graphene Growth and Doping Optimization

1.4.2 Other Graphene-like 2D Materials on SiC

1.5 Conclusion

2. Growth Mechanism, Structures, and Properties of Graphene on SiC(0001) Surfaces: Theoretical and Experimental Studies at the Atomic Scale

Wataru Norimatsu, Stephan Irle, and Michiko Kusunoki

2.1 Introduction

2.2 Growth Mechanism of Graphene on SiC(0001)

2.1.1 Experimental Results Concerning the Mechanism on the Si-Face (0001)

2.2.2 Theoretical Simulations of the Growth Mechanism on the Si-Face (0001)

2.2.3 Experimental Results Concerning the Mechanism on the C-Face (0001)

2.2.4 Theoretical Simulations of the Growth Mechanism on the C-Face (0001)

2.3 Structures and Properties of Graphene on SiC

2.4 Conclusion

3. Fabrication of Graphene by Thermal Decomposition of SiC

Gholam Reza Yazdi, Tihomir Iakimova, and Rositza Yakimova

3.1 Introduction

3.2 Epitaxial graphene on SiC polytypes

3.2.1 SiC as a substrate

3.2.2 Graphitization process of SiC polytypes

3.2.3 Growth of graphene on SiC polar faces

3.2.3.1 Effect of ambient conditions

3.2.3.2 Growth of graphene on Si-face

3.2.3.3 Growth of graphene on C-face

3.2.4 Growth on 3C-SiC and its comparison with other polytypes

3.3 Graphene growth on etched SiC substrates

3.3.1 Substrate preparation by etching

3.3.2 Graphene nanoribbons on SiC

3.4 Summary and outlook

4. Nanoscale electrical and structural properties of epitaxial graphene interface with sic(0001)

Filippo Giannazzo, Ioannis Deretzis, Antonino La Magna, Giuseppe Nicotra, Corrado Spinella, Fabrizio Roccaforte, and Rositza Yakimova

4.1 Introduction

4.2 Epitaxial graphene on different sic orientations

4.3 Epitaxial graphene on steps and facets of sic(0001): morphology and structural properties

4.4 Electronic properties of epitaxial graphene residing on Nanosteps and Facets

4.4.1 Anisotropic current transport in epitaxial graphene devices

4.4.2 Nanoscale resistance measurements

4.4.2.1 Monolayer graphene over nanosteps

4.4.2.2 Monolayer/bilayer graphene junctions

4.4.2.3 Few layers of graphene on facets

4.4.3 Correlating macroscopic current transport anisotropy with nanoscale resistance inhomogeneities

4.4.4 Local electron mean free path

4.5 Summary

5. Theory of graphene growth on sic substrate

Hiroyuki Kageshima

5.1 Introduction

5.2 Fundamental aspects

5.2.1 Dependence of the stacking ordering of graphene layers on the termination of sic

5.2.2 Dependence of the atomic ordering of graphene on the graphene-sic interface

5.2.3 Dependence of the atomic ordering of graphene on the temperature and si pressure

5.2.4 Dependence of the atomic ordering of graphene on atmosphere

5.2.5 Relation between sic crystal etching and graphene growth rate

5.3 Sublimation from terraces and immobile carbon

5.4 Carbon growth on terrace

5.5 Step and silicon sublimation

5.5.1 On pristine sic surface

5.5.2 Post-zeroth graphene layer formation

5.6 Role of steps and carbon nucleation

5.6.1 Initial stage of carbon nucleation and the role of steps

5.6.2 Effect of epitaxy at the step

5.7 Further discussions

5.7.1 Step wandering

5.7.2 Silicon sublimation path

5.7.3 Orientation dependence

5.7.4 Kinetics and dynamics

5.8 Summary

6. Epitaxial Graphene on SiC from the Viewpoint of Planar Technology

Gemma Rius and Philippe Godignon

6.1 Semiconductors planar technology

6.1.1 Semiconductors surface and bulk treatments

6.1.2 Patterning

6.1.3 Pattern Transfer

6.2 Making of EG on SiC Materials

6.2.1 SiC Substrate Preparation: Surface Polishing

6.2.2 Standard Lithography

6.2.3 Typical Hall Bar Fabrication Process

6.2.4 Template Growth

6.2.5 Nanoribbons

6.3 Making of EG on Pre-processed SiC

6.3.1 Fabrication of Bottom-Gated Samples

7. Beauty of Quantum Transport in Graphene

Benoit Jouault, Félicien Schopfer, and Wilfrid Poirier

7.1 Introduction

7.2 A Short Overview of Graphene

7.3 Growth and Characterization of Graphene on SiC

7.4 Transport Properties of Graphene on SiC

7.4.1 Evidences of Hopping Conduction in the Quantum Hall Regime

7.5 Scattering Mechanisms Limiting the Mobility

7.5.1 Main Scattering Mechanisms on Graphene on SiO₂

7.5.2 Graphene on SiC: Short-Range Defects, Interface Phonons, and Structural Steps

7.6 Quantum Corrections at Low Fields

7.6.1 Weak Localization

7.6.2 Altshuler-Aronov Correction

7.7 Conclusion

Appendix A: Raman spectroscopy of graphene on silicon carbide

Ana Ballestar

A.1 Raman as a tool to distinguish graphene

A.1.1 Raman scattering

A.1.2 Raman spectroscopy

A.1.3 Raman spectroscopy of graphene

A.2 Raman spectra of graphene on silicon carbide

A.2.1 Substrate contribution

A.2.2 The d band

A.2.3 The g band

A.2.4 The 2d band

A.2.5 Relative intensity

A.2.6 Sic morphology reflected on raman mappings

A.3 Concluding remarks

Appendix B: Graphene on SiC: Chemico-Physical Characterization by XPS

Micaela Castellino and Jordi Fraxedas

B.1 XPS: A Powerful technique for surface analysis

B.1.1 Planar approach analysis

B.1.2 Angle-resolved xps (ar-xps)

B.1.3 Mapping mode

B.1.4 Using synchrotron radiation

Index

Preface

We are pleased to present the first book dedicated exclusively to epitaxial graphene on silicon carbide (SiC). This book comprehensively addresses all relevant aspects of the study and technological development o...

Table of contents

• Cover
• Halftitle Page
• Title Page
• Copyright
• Table of Contents