Characterization of Semiconductor Heterostructures and Nanostructures

Giovanni Agostini, Carlo Lamberti

• Publisher: Elsevier Science
• Year: 2013
• Edition: 2
• eBook ISBN:
  9780444595492
• Topic: Technology & Engineering
• Subtopic: Quantum Theory
• Index: Technology & Engineering

Characterization of Semiconductor Heterostructures and Nanostructures is structured so that each chapter is devoted to a specific characterization technique used in the understanding of the properties (structural, physical, chemical, electrical etc..) of semiconductor quantum wells and superlattices. An additional chapter is devoted to ab initio modeling. The book has two basic aims. The first is educational, providing the basic concepts of each of the selected techniques with an approach understandable by advanced students in Physics, Chemistry, Material Science, Engineering, Nanotechnology. The second aim is to provide a selected set of examples from the recent literature of the TOP results obtained with the specific technique in understanding the properties of semiconductor heterostructures and nanostructures. Each chapter has this double structure: the first part devoted to explain the basic concepts, and the second to the discussion of the most peculiar and innovative examples.  The topic of quantum wells, wires and dots should be seen as a pretext of applying top level characterization techniques in understanding the structural, electronic etc properties of matter at the nanometer (and even sub-nanometer) scale. In this respect it is an essential reference in the much broader, and extremely hot, field of Nanotechnology. - Comprehensive collection of the most powerful characterization techniques for semiconductors heterostructures and nanostructures - Most of the chapters are authored by scientists that are world-wide among the top-ten in publication ranking of the specific field - Each chapter starts with a didactic introduction on the technique - The second part of each chapters deals with a selection of top examples highlighting the power of the specific technique to analyse the properties of semiconductors heterostructures and nanostructures

Table of contents

• Cover image
• Title page
• Table of Contents
• Copyright
• Dedication
• Preface
• Contributors
• Chapter 1. Introduction: The Interdisciplinary Nature of and Nanotechnology and Its Need to Exploit Frontier Characterization Techniques
• Chapter 2. Ab initio Studies of Structural and Electronic Properties
• Chapter 3. Strain and Composition Determination in Semiconductor Heterostructures by High-Resolution X-Ray Diffraction
• Chapter 4. Nanostructures Observed by Surface Sensitive X-Ray Scattering and Highly Focused Beams
• Chapter 5. Small-Angle X-Ray Scattering for the Study of Nanostructures and Nanostructured Materials
• Chapter 6. Local Structure of Bulk and Nanocrystalline Semiconductors Using Total Scattering Methods
• Chapter 7. X-Ray Absorption Fine Structure in the Study of Semiconductor Heterostructures and Nanostructures
• Chapter 8. Grazing Incidence Diffraction Anomalous Fine Structure in the Study of Structural Properties of Nanostructures
• Chapter 9. Micro- and Nano-X-ray Beams
• Chapter 10. Transmission Electron Microscopy Techniques for Imaging and Compositional Evaluation in Semiconductor Heterostructures
• Chapter 11. Imaging at the Nanoscale: Scanning Probe Microscopies Applied to Semiconductors
• Chapter 12. Photoluminescence Characterization of Structural and Electronic Properties of Semiconductor Quantum Wells
• Chapter 13. Cathodoluminescence of Self-assembled Nanosystems: The Cases of Tetrapods, Nanowires, and Nanocrystals
• Chapter 14. The Role of Photoemission Spectroscopies in Heterojunction Research
• Chapter 15. Electrical and Electro-Optical Characterization of Semiconductor Nanowires
• Chapter 16. Electron Spin Resonance of Interfaces and Nanolayers in Semiconductor Heterostructures
• Chapter 17. Raman Spectroscopy
• Index