Acoustic, Thermal Wave and Optical Characterization of Materials

G.M. Crean, M. Locatelli, J. McGilp

• Publisher: North Holland
• Year: 2014
• Print ISBN: 9780444885524
• eBook ISBN: 9780444596642
• Topic: Technology & Engineering
• Subtopic: Physics
• Index: Physics

This volume focuses on a variety of novel non-destructive techniques for the characterization of materials, processes and devices. Emphasis is placed on probe-specimen interactions, in-situ diagnosis, instrumentation developments and future trends. This was the first time a symposium on this topic had been held, making the response particularly gratifying. The high quality of the contributions are a clear indication that non-destructive materials characterization is becoming a dynamic research area in Europe at the present time.A selection of contents: The role of acoustic properties in designs of acoustic and optical fibers (C.K. Jen). Observation of stable crack growth in Al2O3 ceramics using a scanning acoustic microscope (A. Quinten, W. Arnold). Mechanical characterization by acoustic techniques of SIC chemical vapour deposited thin films (J.M. Saurel et al.). Efficient generation of acoustic pressure waves by short laser pulses (S. Fassbender et al.). Use of scanning electron acoustic microscopy for the analysis of III-V compound devices (J.F. Bresse). Waves and vibrations in periodic piezoelectric composite materials (B.A. Auld). Precision ultrasonic velocity measurements for the study of the low temperature acoustic properties in defective materials (A. Vanelstraete, C. Laermans). Thermally induced concentration wave imaging (P. Korpiun et al.). Interferometric measurement of thermal expansion (V. Kurzmann et al.). Quantitative analyses of power loss mechanisms in semiconductor devices by thermal wave calorimetry (B. Büchner et al.). Thermal wave probing of the optical electronic and thermal properties of semiconductors (D. Fournier, A. Boccara). Thermal wave measurements in ion-implanted silicon (G. Queirola et al.). Optical-thermal non-destructive examination of surface coatings (R.E. Imhof et al.). Bonding analysis of layered materials by photothermal radiometry (M. Heuret et al.). Thermal non-linearities of semiconductor-doped glasses in the near-IR region (M. Bertolotti et al.). Theory of picosecond transient reflectance measurement of thermal and eisatic properties of thin metal films (Z. Bozóki et al.). The theory and application of contactless microwave lifetime measurement (T. Otaredian et al.). Ballistic phonon signal for imaging crystal properties (R.P. Huebener et al.). Determination of the elastic constants of a polymeric Langmuir-Blodgett film by Briliouin spectroscopy (F. Nizzoli et al.). Quantum interference effects in the optical second-harmonic response tensor of a metal surface (O. Keller). Study of bulk and surface phonons and plasmons in GaAs/A1As superlattices by far-IR and Raman spectroscopy (T. Dumslow et al.). Far-IR spectroscopy of bulk and surface phonon-polaritons on epitaxial layers of CdTe deposited by plasma MOCVD on GaAs substrates (T. Dumelow et al.). In-situ characterization by reflectance difference spectroscopy of III-V materials and heterojunctions grown by low pressure metal organic chemical vapour deposition (O. Acher et al.). Optical evidence of precipitates in arsenic-implanted silicon (A. Borghesi et al.). Polarized IR reflectivity of CdGeAs2 (L. Artús et al.). Raman and IR spectroscopies: a useful combination to study semiconductor interfaces (D.R.T. Zahn et al.). Silicon implantation of GaAs at low and medium doses: Raman assessment of the dopant activation (S. Zakang et al.). Ellipsometric characterization of thin films and superlattices (J. Bremer et al.). Ellipsometric characterization of multilayer transistor structures (J.A. Woollam et al.). Quality of molecular-beam-epitaxy-grown GaAs on Si(100) studied by ellipsometry (U. Rossow et al.). An ellipsometric and RBS study of TiSi2 formation (J.M.M. de Nijs, A. van Silfhout). A new microscope for semiconductor luminescence studies (P.S. Aplin, J.C. Day). Structural analysis of optical fibre preforms fabricated by the sol-gel process (A.M. Elas et al.). Author index.

Table of contents

• Front Cover
• Acoustic, Thermal Wave and Optical Characterization of Materials
• Copyright Page
• Table of Contents
• Preface
• Chapter 1. The Role of acoustic properties in designs of acoustic and optical fibers
• Chapter 2. Scanning acoustic microprobe analysis for testing solid state materials
• Chapter 3. Observation of stable crack growth in Al2O3 ceramics using a scanning acoustic microscope
• Chapter 4. Acoustic lenses employing PZT thin film transducers
• Chapter 5. Mechanical characterization by acoustic techniques of SiC chemical-vapour-deposited thin films
• Chapter 6. Study of attenuation and dispersion of optically excited surface acoustic waves employing small polyfvinylidene difluoride) foil transducers
• Chapter 7. Efficient generation of acoustic pressure waves by short laser pulses
• Chapter 8. Phase-preserving imaging of high frequency surface acoustic wave fields
• Chapter 9. Scanning electron acoustic microscopy of SiC particles in metal matrix composites
• Chapter 10. Use of scanning electron acoustic microscopy for the analysis of III—V compound devices
• Chapter 11. Signal generation in scanning electron acoustic microscopy
• Chapter 12. Waves and vibrations in periodic piezoelectric composite materials
• Chapter 13. Propagation of elastic waves in one-dimensional composites
• Chapter 14. Precision ultrasonic velocity measurements for the study of the low temperature acoustic properties in defective materials
• Chapter 15. Bulk and surfaces waves for wood anisotropy characterization
• Chapter 16. Photoacoustic characterization of liquid crystal phase transitions
• Chapter 17. Analysis of plasma surface modifications by thermal depth profiling and correlation with plasma-surface interactions
• Chapter 18. Thermally induced concentration wave imaging
• Chapter 19. Application of the photoacoustic technique between room temperature and 1000K for thermophysical measurements of porous graphite samples
• Chapter 20. Pyroelectric thermal wave detector and its application
• Chapter 21. Interferometric measurement of thermal expansion
• Chapter 22. Heterodyne common path interferometers for surface profilometry and characterization
• Chapter 23. Quantitative analyses of power loss mechanisms in semiconductor devices by thermal wave calorimetry
• Chapter 24. Application of ultrasonic microscopy to non-destructive evaluation
• Chapter 25. Thermal wave probing of the optical electronic and thermal properties of semiconductors
• Chapter 26. Modelling of the photothermal radiometric response of a layered dielectric-on-semiconductor structure
• Chapter 27. Thermal wave measurements in ion-implanted silicon
• Chapter 28. Non-contacting determination of carrier lifetime and surface recombination velocity using photothermal radiometry
• Chapter 29. Non-destructive, non-contact characterization of silicon using photothermal radiometry
• Chapter 30. Opto-thermal non-destructive examination of surface coatings
• Chapter 31. Bonding analysis of layered materials by photothermal radiometry
• Chapter 32. Measurement of the thermal radial diffusivity of anisotropic materials by the converging thermal wave technique
• Chapter 33. Imaging of the interface between fibres and matrix in the yarns of three-directional carbon-carbon composites by a photoacoustic method
• Chapter 34. Thermal non-linearities of semiconductor-doped glasses in the near-IR region
• Chapter 35. Theory of picosecond transient reflectance measurement of thermal and elastic properties of thin metal films
• Chapter 36. The theory and application of contactless microwave lifetime measurement
• Chapter 37. Ballistic phonon signal for imaging crystal properties
• Chapter 38. Acoustic phonons in a-Si: H/a-SiNx: H superlattices
• Chapter 39. Determination of the elastic constants of a polymeric Langmuir-Blodgett film by Brillouin spectroscopy
• Chapter 40. Optical spectroscopy of semiconductor surfaces
• Chapter 41. Quantum interference effects in the optical second-harmonic response tensor of a metal surface
• Chapter 42. Non-destructive optical and magneto-optical analysis of inhomogeneously doped semiconductors
• Chapter 43. On the structure of the eigenmodes of surface electromagnetic waves on metals
• Chapter 44. Study of bulk and surface phonons and plasmons in GaAs/AIAs superlattices by far-IR and Raman spectroscopy
• Chapter 45. A study of strained InGaAs single quantum wells using photoreflectance
• Chapter 46. Far-IR spectroscopy of bulk and surface phonon-polaritons on epitaxial layers of CdTe deposited by plasma MOCVD on GaAs substrates
• Chapter 47. In situ characterization by reflectance difference spectroscopy of lll-V materials and heterojunctions grown by low pressure metal organic chemical vapour deposition
• Chapter 48. Optical evidence of precipitates in arsenic-implanted silicon
• Chapter 49. Crystallization kinetics of thin amorphous InSb films
• Chapter 50. Polarized IR reflectivity of CdGeAs2
• Chapter 51. Reflected polarized light microscopy of the ferroelastic domain structures of YBa2Cu3O7-x
• Chapter 52. Raman and IR spectroscopies: a useful combination to study semiconductor interfaces
• Chapter 53. Characterization of materials by micro-Raman spectroscopy
• Chapter 54. Micro-Raman study of the residual stress in molecular-beam-epitaxy-grown A^Ga^^s/GaAs multilayer structures
• Chapter 55. Raman scattering from In-xGa1-xAs grown on GaAs(001) by molecular beam epitaxy
• Chapter 56. Silicon implantation of GaAs at low and medium doses: Raman assessment of the dopant activation
• Chapter 57. Characterization of GaAs buffer layers 0.1 μm thick grown on Si(100)
• Chapter 58. Fundamentals and applications of variable angle spectroscopic ellipsometry
• Chapter 59. Ellipsometric characterization of thin films and superlattices
• Chapter 60. Ellipsometric characterization of multilayer transistor structures
• Chapter 61. Characterization of rough silicon surfaces using spectroscopic ellipsometry, reflectance, scanning electron microscopy and scattering measurements
• Chapter 62. Spectroscopic ellipsometry characterization of silicon-on-insulator materials
• Chapter 63. Quality of molecular-beam-epitaxy-grown GaAs on Si (100) studied by ellipsometry
• Chapter 64. The kinetics of titanium monosilicide growth studied by three-wavelength ellipsometry
• Chapter 65. An ellipsometric and RBS study of TiSi2 formation
• Chapter 66. Control of buried junctions by light-beam-induced current mapping
• Chapter 67. A new microscope for semiconductor luminescence studies
• Chapter 68. Evanescent field IR spectroscopy using optical fibres and tunable diode lasers
• Chapter 69. Structural analysis of optical fibre preforms fabricated by the sol-gel process
• Author Index