Nuclear Methods in Semiconductor Physics

G. Langouche, J.C. Soares, J.P. Stoquert

• Publisher: North Holland
• Year: 1992
• Print ISBN: 9780444894205
• eBook ISBN: 9780444596819
• Topic: Ciencias físicas
• Subtopic: Física nuclear

The two areas of experimental research explored in this volume are: the Hyperfine Interaction Methods, focusing on the microscopic configuration surrounding radioactive probe atoms in semiconductors, and Ion Beam Techniques using scattering, energy loss and channeling properties of highly energetic ions penetrating in semiconductors. A large area of interesting local defect studies is discussed. Less commonly used methods in the semiconductor field, such as nuclear magnetic resonance, electron nuclear double resonance, muon spin resonance and positron annihilation, are also reviewed. The broad scope of the contributions clearly demonstrates the growing interest in the use of sometimes fairly unconventional nuclear methods in the field of semiconductor physics.

Table of contents

• Front Cover
• Nuclear Methods in Semiconductor Physics
• Copyright Page
• Table of Contents
• Preface
• Scientific Committee, Supporting Organisations and Sponsors
• Chapter 1. Ion beams in semiconductor physics and technology
• Chapter 2 . Induced damage by high energy heavy ion irradiation at the GANIL accelerator in semiconductor materials
• Chapter 3 . An investigation by resistance and photoluminescence measurements of high-energy heavy-ion-irradiated GaAs
• Chapter 4 . High energy ion irradiation of germanium
• Chapter 5 . Ion beam analysis of mismatched epitaxial heterostructures
• Chapter 6 . Dechanneling cross section for misfit dislocations
• Chapter 7 . Ion channeling study of P implantation damage in CdTe
• Chapter 8 . Investigation of the amorphization process in ion implanted A111 Bv compounds
• Chapter 9 . Nucleation of point defects in low-fluence ion-implanted GaAs and GaP
• Chapter 10 . Precision measurement of axial channel angles
• Chapter 11 . Investigation of defects by RBS-channeling methods
• Chapter 12 . Differences in the damage production of proton implanted GaAs, Ge and Si investigated bytemperature dependent dechannelingBachmann
• Chapter 13 . Application of 1 60 RBS to heavy compound materials
• Chapter 14 . Ar ion induced X-ray emission for the analysis of light elements in CdTe
• Chapter 15 . Elemental analysis of thin layers by elastic heavy ion scattering
• Chapter 16 . Emission channeling studies in semiconductors
• Chapter 17 . Lattice site changes of ion implanted 8Li in Si studied by alpha emission channeling
• Chapter 18 . Neutron transmutation doped silicon - technological and economic aspects
• Chapter 19 . Efficiency of neutron transmutation doping of InP investigated by optical and electrical methods
• Chapter 20 . The electrical and radioactive assessment of the transmutation doping of GaAs following implantationby 111In
• Chapter 21 . Ion beam deposition and in-situ ion beam analysis
• Chapter 22 . A focused gas-ion beam system for submicron application
• Chapter 23 . Muon-decay positron channeling in semiconductors
• Chapter 24 . Single and double buried epitaxial metallic layers in Si prepared by ion implantation
• Chapter 25 . Mossbauer and channeling measurements on buried layers of CoSi2 in Si
• Chapter 26 . A 129 I Mossbauer investigation of the ohmic contact formation mechanism in the Au/Te/Au/n-GaAs system, questioned and confirmed by X-ray analysis and Raman spectroscopy
• Chapter 27 . Donor-hydrogen complexes in silicon studied by Mössbauer spectroscopy
• Chapter 28 . Mossbauer spectroscopy investigation of the DX-center in Te-implanted AlxGa1-xAs
• Chapter 29 . Nuclear interactions of defects in semiconductors - magnetic resonance measurements
• Chapter 30 . Positron annihilation in silicon single crystals
• Chapter 31 . Positron annihilation and charge state of the vacancies in as-grown and electron irradiated GaAs
• Chapter 32 .β -NMR study on the lattice locations of boron implanted into silicon
• Chapter 33 . High resolution conversion electron spectroscopy of impurities in semiconductors
• Chapter 34 . Identification of band gap states by deep level transient spectroscopy on radioactive probes
• Chapter 35 . PAC studies on the formation and stability of acceptor-defect complexes in semiconductors
• Chapter 36 . Quench-induced defects in silicon
• Chapter 37 . Dynamic behaviour of Cd-Cu pairs in Si observed by PAC
• Chapter 38 . Hydrogen passivation of acceptors in silicon: a combined PAC and resistivity study
• Chapter 39 . Dynamics and electronic transitions at impurity complexes in semiconductors
• Chapter 40 . Acceptor-donor pairs in germanium
• Chapter 41 . Magnetic behavior of isolated Fe and Ni ions in semiconducting compounds
• Chapter 42 . PAC studies on impurities in ZnO
• Chapter 43 . PAC investigations of the shallow donor environment in GaAs
• Chapter 44 . Development of CuInS2 solar cell material by PAC: bulk phases, thin films, and nuclear reactiondoping
• Chapter 45 . Annealing of lattice defects in chalcopyrite semiconductors - TDPAC investigations
• Chapter 46 . Generation of intrinsic defects in CdS:In by doping with Li atoms
• Chapter 47 . Perturbed angular correlation observation of vacancy-indium atom defect complexes in (Hg,Cd)Te
• Chapter 48 . Hyperfine interactions and Rutherford backscattering studies of Cd and Hg in CdTe singlecrystals and thin films
• Author Index