SiC, Natural and Synthetic Diamond and Related Materials

A.A. Gippius, R. Helbig, J.P.F. Sellschop

• Publisher: North Holland
• Year: 1992
• Print ISBN:
  9780444894168
• eBook ISBN:
  9780444596772
• Topic: Physical Sciences
• Subtopic: Physical & Theoretical Chemistry

This volume addresses the burgeoning field of wide band gap materials. The 64 contributed and invited papers will do much to stimulate the well-justified ongoing work, both theoretical and experimental, in this area. The high standard of the papers attests to the significant progress that has been made in this field, as well as reporting on the challenging problems that still remain to be solved.

Table of contents

• Front Cover
• SiC, Natural and Synthetic Diamond and Related Materials
• Copyright Page
• Table of Contents
• Preface
• Sponsors
• Acknowledgments
• Chapter 1. Preparation and optical properties of wide gap II–VI compounds
• Chapter 2. Optical bestability in II–VI compounds
• Chapter 3. Optical studies of donors and acceptors in cubic SiC
• Chapter 4. Electron spin resonance studies of transition metal deep level impurities in SiC
• Chapter 5. Characterization of 3C-SiC epilayers by pulsed electron spin resonance
• Chapter 6. Electron paramagnetic resonance study of new centres in SiC
• Chapter 7. Measurement of electro-optical properties of β-SiC on sapphir esubstrates and free-standing films
• Chapter 8. Interdiffusion in amorphous Si/SiC multilayers
• Chapter 9. Optical absorption coefficients in a-Si1–x Cx:H
• Chapter 10. Short-range order in hydrogenated amorphous Si–C alloys studied by extended X-ray absorption fine structure
• Chapter 11. A computational study into the origin of SiC polytypes
• Chapter 12. Composition and structure of epitaxial β-SiC films grown by reactive magnetron sputtering on Si(100) substrates
• Chapter 13. Influence of deposition parameters on the properties of SiC films
• Chapter 14. Influence of surface energy on the growth of 6H-and 4H-SiC polytypes by sublimation
• Chapter 15. Stress modification and characterization of thin SiC films grown byplasma-enhanced chemical vapour deposition
• Chapter 16. Preparation of crystalline SiC thin films by plasma-enhanced chemical vapour deposition and by ion beam modification of silicon
• Chapter 17. Growth and properties of CVD–SiC layers using tetramethylsilane
• Chapter 18. SiC and TaC as optical materials
• Chapter 19. Growth of SiC on silicon in a low pressure vertical reactor
• Chapter 20. Electronic structure of laser-synthesized SiC by photoelectron and soft X-ray spectroscopy
• Chapter 21. SiC bipolar devices
• Chapter 22. Fabrication of SiC epitaxial structures for devices by the method of sublimation in an open system
• Chapter 23. Applications of SiC thin films in low temperature devices
• Chapter 24. α-SiC buried-gate junction field effect transistors
• Chapter 25. Chemical vapor deposition of β -SiC on silicon-on-sapphire and silicon-on-insulator substrates
• Chapter 26. Characterization studies of low pressure chemical vapour deposition SICARB layers for wide band gap emitters
• Chapter 27. Electron channelling radiation: first steps towards a bright and tunable X-ray source
• Chapter 28. Prospects for new applications of diamond produced by stable andmetastable synthesis
• Chapter 29. Hard-photon emission and shower formation when multigiga-electronvolt electrons penetrate single crystals near axial directions: strong-field effects
• Chapter 30. Applications exploiting the extreme properties of diamonds
• Chapter 31. Polycrystalline diamond for optical thin films
• Chapter 32. High energy ion implantation into diamond and cubic boron nitride
• Chapter 33. Limits to diamond and diamond-like material properties produced under metastable conditions
• Chapter 34. Limits to quality and size of diamond and cubic boron nitrid esynthesized under high pressure, high temperature conditions
• Chapter 35. Megaelectronvolt ion irradiation effects in amorphous carbon: the roles of the C—C and C—C bonds
• Chapter 36. Theoretical status of diamond and its defects, excited state sand atomic motion
• Chapter 37. Materials modification: doping of diamond by ion implantation
• Chapter 38. The fate of implanted 19F ions in diamond and their theoretical modelling
• Chapter 39. Diamond and diamond simulants as studied by micro-Raman spectroscopy
• Chapter 40. Electron and nuclear structural characterization of natural, synthetic, homoepitaxial and polycrystalline low pressure chemically vapour-deposited diamond
• Chapter 41. Ion beam studies of the static and dynamic properties of dopants in diamond
• Chapter 42. Diamond electronic devices—can they outperform silicon or GaAs?
• Chapter 43. Theory of native defects, doping and diffusion in diamond and silicon carbide
• Chapter 44. p -Type semiconducting structures in diamond implanted with boron ions
• Chapter 45. Metallurgical study of SiC-NiCr plasma-sprayed coatings
• Chapter 46. One-electron states induced by 3d transition metal impurities in diamond
• Chapter 47. Plasma-enhanced chemical vapour deposition of SiC layers using a liquid source
• Chapter 48. Effects of surface etching before metal contact formation on carbon/diamond-silicon heterojunction diode characteristics
• Chapter 49. On the fracture statistics of polycrystalline a-SiC at room and high temperature
• Chapter 50. Electronic properties of disordered SiC materials
• Chapter 51. Temperature dependence of the electric field gradient parameters at 19F lattice sites in semiconducting and insulating diamonds
• Chapter 52. Influence of silicon on the physical properties of diamond-like films
• Chapter 53. Epitaxially grown β-SiC on Si(100) and Si(111) substrates by low pressure chemical vapour deposition
• Chapter 54. Diamond-like carbon films deposited in a dual microwave–radio-frequency plasma
• Chapter 55. Transmission electron microscopy studies of dislocation mechanisms in as-sintered α-SiC and after creep experiments at high temperature
• Chapter 56. Epitaxial growth of diamond-like films on Si(100) by pulsed-laser evaporation of graphite
• Chapter 57. The 2.526 eV luminescence band in diamond
• Chapter 58. Study of the growth mechanisms of amorphous carbon films by isotopic tracing methods
• Chapter 59. Thermal conductivity measurements of synthetic diamond films using the photothermal beam deflection technique
• Chapter 60. Raman spectra and electrical conductivity of glassy carbon
• Chapter 61. Nitrogen-containing defects in diamond: experimental data and molecular orbital linear-combination-of-atomic-orbitals
• Chapter 62. Scanning tunnelling microscopy studies of diamond-like films prepared by laser ablation
• Chapter 63. Picosecond optical measurements of the properties of heavily carbon-implanted silicon
• Author Index
• Subject Index