Silicon Molecular Beam Epitaxy

Erwin Kasper, E.H.C. Parker

• Publisher: North Holland
• Year: 2012
• Print ISBN:
  9780444886200
• eBook ISBN:
  9780080983684
• Topic: Technology & Engineering
• Subtopic: Physics
• Index: Physics

This two-volume work covers recent developments in the single crystal growth, by molecular beam epitaxy, of materials compatible with silicon, their physical characterization, and device application. Papers are included on surface physics and related vacuum synthesis techniques such as solid phase epitaxy and ion beam epitaxy.A selection of contents: Volume I. SiGe Superlattices. SiGe strained layer superlattices (G. Abstreiter). Optical properties of strained GeSi superlattices grown on (001)Ge (T.P. Pearsall et al.). Growth and characterization of SiGe atomic layer superlattices (J.-M. Baribeau et al.). Optical properties of perfect and imperfect SiGe superlattices (K.B. Wong et al.). Confined phonons in stained short-period (001) Si/Ge superlattices (W. Bacsa et al.). Calculation of energies and Raman intensities of confined phonons in SiGe strained layer superlattices (J. White et al.). Rippled surface topography observed on silicon molecular beam epitaxial and vapour phase epitaxial layers (A.J. Pidduck et al.). The 698 meV optical band in MBE silicon (N. de Mello et al.). Silicon Growth Doping. Dopant incorporation kinetics and abrupt profiles during silicon molecular beam epitaxy (J.-E. Sundgren et al.). Influence of substrate orientation on surface segregation process in silicon-MBE (K. Nakagawa et al.). Growth and transport properties of SimSb1 (H. Jorke, H. Kibbel). Author Index. Volume. II. In-situ electron microscope studies of lattice mismatch relaxation in GexSi1-x/Si heterostructures (R. Hull et al.). Heterogeneous nucleation sources in molecular beam epitaxy-grown GexSi1-x/Si strained layer superlattices (D.D. Perovic et al.). Silicon Growth. Hydrogen-terminated silicon substrates for low-temperature molecular beam epitaxy (P.J. Grunthaner et al.). Interaction of structure with kinetics in Si(001) homoepitaxy (S. Clarke et al.). Surface step structure of a lens-shaped Si(001) vicinal substrate (K. Sakamoto et al.). Photoluminescence characterization of molecular beam epitaxial silicon (E.C. Lightowlers et al.). Doping. Boron doping using compound source (T. Tatsumi). P-type delta doping in silicon MBE (N.L. Mattey et al.). Modulation-doped superlattices with delta layers in silicon (H.P. Zeindell et al.). Steep doping profiles obtained by low-energy implantation of arsenic in silicon MBE layers (N. Djebbar et al.). Alternative Growth Methods. Limited reaction processing: growth of Si/Si1-xGex for heterojunction bipolar transistor applications (J.L. Hoyt et al.). High gain SiGe heterojunction bipolar transistors grown by rapid thermal chemical vapor deposition (M.L. Green et al.). Epitaxial growth of single-crystalline Si1-xGex on Si(100) by ion beam sputter deposition (F. Meyer et al.). Phosphorus gas doping in gas source silicon-MBE (H. Hirayama, T. Tatsumi). Devices. Narrow band gap base heterojunction bipolar transistors using SiGe alloys (S.S. Iyer et al.). Silicon-based millimeter-wave integrated circuits (J-F. Luy). Performance and processing line integration of a silicon molecular beam epitaxy system (A.A. van Gorkum et al.). Silicides. Reflection high energy electron diffraction study of Cosi2/Si multilayer structures (Q. Ye at al.). Epitaxy of metal silicides (H. von Kanel et al.). Epitaxial growth of ErSi2 on (111)si (D. Loretto et al.). Other Material Systems. Oxygen-doped and nitrogen-doped silicon films prepared by molecular beam epitaxy (M. Tabe et al.). Properties of diamond structure SnGe films grown by molecular beam epitaxy (A. Harwit et al.). Si-MBE: Prospects and Challenges. Prospects and challenges for molecular beam epitaxy in silicon very-large-scale integration (W. Eccleston). Prospects and challenges for SiGe strained-layer epitaxy (T.P. Pearsall). Author Index.

Table of contents

• Front Cover
• Silicon Molecular Beam Epitaxy
• Copyright Page
• Table of Contents
• Chapter 1. Si–Ge strained layer superlattices
• Chapter 2. Optical properties of strained Ge–Si superlattices grown on (00 l)Ge
• Chapter 3. Growth and characterization of Si–Ge atomic layer superlattices
• Chapter 4. Study of hole transport through minibands in symmetrically strained GexSi1-x/Si superlattices
• Chapter 5. Electronic structure of ultrathin Si„Ge,, strained superlattices: the possibility of direct band gaps
• Chapter 6. Optical properties of perfect and imperfect Si–Ge superlattices
• Chapter 7. Investigation of SimGen strained monolayer superlattices by RHEED, Raman, and X-ray techniques
• Chapter 8. Confined phonons in strained short-period (001)Si/Ge superlattices
• Chapter 9. Calculation of energies and Raman intensities of confined phonons in Si–Ge strained layer superlattices
• Chapter 10. Relaxation of coherent strain in Si1-xGex/Si superlattices and alloys
• Chapter 11. Strain adjustment in ultra thin Si/Ge superlattices
• Chapter 12. Improvement of structural properties of Si/Ge superlattices
• Chapter 13. Phonons in Si/Ge superlattices: theory and experiment
• Chapter 14. A photoluminescence study of Si/Ge superlattices
• Chapter 15. Strain relaxation phenomena in GexSi1-x/Si strained structures
• Chapter 16. Misfit dislocations in annealed Si1-xGex/Si heterostructures
• Chapter 17. Heterogeneous nucleation sources in molecular beam epitaxy-grown GexSi1-x/Si strained layer superlattices
• Chapter 18. Reduction of dislocation density of MBE-grown Si1-xGex layers on (100) Si by rapid thermal annealing
• Chapter 19. Chemical ordering and boundary structure in crystalline Si–Ge superlattices
• Chapter 20. The structural stability of uncapped versus buried Si1-xGex strained layers through high temperature processing
• Chapter 21. Germanium diffusion and strain relaxation in Si/Si1-xGex/Si structures
• Chapter 22. Ge segregation during molecular beam epitaxial growth of Si1 -xGex/Si layers
• Chapter 23. Hydrogen-terminated silicon substrates for low-temperature molecular beam epitaxy
• Chapter 24. The initial stages of growth of silicon on Si(111) by slow positron annihilation low-energy electron diffraction
• Chapter 25. Interaction of structure with kinetics in Si(001)homoepitaxy
• Chapter 26. Surface step structure of a lens-shaped Si(OO1) vicinal substrate
• Chapter 27. Photoluminescence characterization of molecular beam epitaxial silicon
• Chapter 28. Rippled surface topography observed on silicon molecular beam epitaxial and vapour phase epitaxial layers
• Chapter 29. Reflection high energy electron diffraction and scanning tunnelling microscopy study of single-domain growth during silicon molecular beam epitaxy onSi(001)
• Chapter 30. The 698 meV optical band in MBE silicon
• Chapter 31. Dopant incorporation kinetics and abrupt profiles during silicon molecular beam epitaxy
• Chapter 32. The measurement of surface boron on silicon wafers annealed in vacuum and gasambients
• Chapter 33. Low temperature kinetics of Si(100) MBE growth
• Chapter 34. Influence of substrate orientation on surface segregation process in silicon- MBE
• Chapter 35. Growth and transport properties of Sim Sb1 superlattices
• Chapter 36. Electrical characterization and subband structures in antimony α-doped molecular beam epitaxy-silicon layers
• Chapter 37. Equipment of a 3-inch silicon molecular beam epitaxial system with scanning tunnelling microscopy
• Chapter 38. A Monte Carlo study of the silicon film growth from molecular beams
• Chapter 39. Electrical Properties of Gallium – and Antimonydopedsilicon Layers, Grown By Solid Phase Epitaxyin a Molecular Beam Epitaxial Growth Chamber
• Chapter 40. Structure of amorphous silicon layers deposited under ultrahigh vacuum at different substrate temperatures
• Author Index
• Subject Index