SiGe Based Technologies

Y. Shiraki, T.P. Pearsall, Erwin Kasper, Yasuhiro Shiraki

• Publisher: North Holland
• Year: 1993
• Print ISBN: 9780444899057
• eBook ISBN: 9780444596895
• Topic: Physical Sciences
• Subtopic: Physics
• Index: Physics

The preparation of silicon germanium microstructures, their physical, chemical and electrical characterization, and their device processing and application are reviewed in this book. Special emphasis is given to ultrathin Si/Ge superlattices. Topics covered include: Wafer preparation and epitaxial growth; surface effects driven phenomena, such as clustering, segregation, 'surfactants'; Analysis, both in situ and ex situ; Strain adjustment methods; High quality buffers; Modification of material properties by quantum wells and superlattices; Devices: Novel concepts, processing, modelling, demonstrators. The questions highlighted, particularly those articles comparing related or competing activities, will provide a wealth of knowledge for all those interested in the future avenues of theory and applications in this field.

Table of contents

• Front Cover
• SiGe Based Technologies
• Copyright Page
• Table of Contents
• Chapter 1. Systematic blue shift of exciton luminescence in strained Si-x Gex/Si quantum well structures grown by gas source silicon molecular beam epitaxy
• Chapter 2. Photoluminescence of SiGe/Si quantum wells prepared by LPCVD
• Chapter 3. Photoluminescence of confined excitons in MBE-grown Si1-x Gex/Si(100) single quantum wells
• Chapter 4. Magnetotransport studies of remote doped Si/Si1-x Gex heterostructures grown on relaxed SiGe buffer layers
• Chapter 5. Electron intersubband absorption in modulation and well-doped Si/Si1-x Gex multiple quantum wells
• Chapter 6. Hole transport in Si0.8 Ge0.2 quantum wells at low temperatures
• Chapter 7. Band gap luminescence in pseudomorphic Si1-x Gex quantum wells grown by molecular beam epitaxy
• Chapter 8. The deposition of Si-Ge strained layers from GeH4, SiH2Cl2, SiH4 and Si2H6
• Chapter 9. Chemical vapour deposition of epitaxial SiGe thin films from SiH4–GeH4–HCl–H2 gas mixtures in an atmospheric pressure process
• Chapter 10. Si/SiGe/Si heterostructure growth without interface roughness at high germanium mole fractions by low temperature low pressure chemical vapour deposition
• Chapter 11. A comparative study of heavy boron doping in silicon and Si1-x Gex layers grown by molecular beam epitaxy
• Chapter 12. Photoluminescence and X-ray diffraction study of highly uniform silicon and GexSi1-x epitaxial layers
• Chapter 13. Low temperature silicon and Si1-x Gex epitaxy by rapid thermal chemical vapour deposition using hydrides
• Chapter 14. Crystallization of amorphous GexSi1-x films on SiO2
• Chapter 15. Photoluminescence and electrical characterization of SiGe/Si heterostructures grown by rapid thermal chemical vapour deposition
• Chapter 16. Characterization of SiGe multiple quantum wells by spectroscopic ellipsometry and photoluminescence
• Chapter 17. SiGe materials characterized by high resolution Raman spectroscopy and spectroscopic ellipsometry
• Chapter 18. Evolution of surface morphology and strain during SiGe epitaxy
• Chapter 19. Photoreflectance study of strained (001) Si1-x Gex/Si layers
• Chapter 20. Band edge and deep level photoluminescence of fully strained Si1-x Gex/Si alloys
• Chapter 21. Observation of electroluminescence from pseudomorphic Si1-x Gex alloy layers
• Chapter 22. Atomistic processes of surface segregation during Si-Ge MBE growth
• Chapter 23. Germanium segregation induced reconstruction of SiGe layers deposited on Si(100)
• Chapter 24. Temperature-dependent growth anisotropy observed on Si(001) surfaces during silicon gas source molecular beam epitaxy using disilane
• Chapter 25. Effect of a surfactant on the growth of Si/Ge heterostructures
• Chapter 26. The electrical assessment of p-isotype Si/SiGe/Si heterostructures grown by MBE
• Chapter 27. Normal incidence hole intersubband quantum well infrared photodetectors in pseudomorphic GexSi1-x/Si
• Chapter 28. Low-temperature in situ cleaning of silicon wafers with an ultra high vacuum compatible plasma source
• Chapter 29. Molecular beam epitaxy grown Si/Si0.87Ge0.13 heterojunction bipolar transistors with ideal I – V characteristics
• Chapter 30. 50 GHz Si1-x Gex heterobipolar transistor: growth of the complete layer sequence by molecular beam epitaxy
• Chapter 31. A comparison of the behaviour of Si0.5Ge0.5 alloy during dry and wet oxidation
• Chapter 32. UV-assisted oxidation of SiGe strained layers
• Chapter 33. Boron-doped Si/Ge superlattices and heterostructures
• Chapter 34. Electrical characterization of Si–Ge heterostructure bipolar transistors
• Chapter 35. Strain relaxation in epitaxial Si1-x Gex/Si(100) layers induced by reaction with palladium
• Chapter 36. The energy of systems of misfit dislocations in epitaxial strained layers
• Chapter 37. 1 MeV electron irradiation induced degradation of boron-doped strained Si1-x Gex layers
• Chapter 38. Deep level transient spectroscopy study of defects in megaelectronvolt germanium ion implanted silicon
• Chapter 39. Crystallization kinetics of boron- and germanium-implanted <100> Si: a balance between doping and strain effects
• Chapter 40. Stress in Si1-x Gex films prepared by ion beam sputtering: origin and relaxation
• Chapter 41. Elastic strain energy of graded Si1-x Gex buffer layers
• Chapter 42. Experimental study of Si–Ge tetrahedral solid solution in Ni–Co–Mg talcs
• Chapter 43. Electroluminescent performance of porous silicon
• Chapter 44. Bright visible photoluminescence in thin silicon films
• Chapter 45. Quantitative theory of optical properties of Si–Ge heterostructures
• Chapter 46. Electronic properties of strained Si/Ge superlattices: tight binding approach
• Chapter 47. Si/Ge superlattice embedded in silicon and germanium: electronic structure and transition probabilities
• Chapter 48. Buffer concepts of ultrathin Sim Gen superlattices
• Chapter 49. Characterization of short-period Sim Gen superlattices by high-resolution transmission electron microscopy and X-ray diffraction
• Chapter 50. Photoluminescence studies of Si/Si1-x Gex quantum wells and Sim Gen superlattices
• Chapter 51. Photoluminescence from short-period strained-layer superlattices of (Si6Ge4)p after hydrogen passivation
• Chapter 52. Optical and electrical characterization of Si/Ge superlattices
• Chapter 53. Band-to-band transitions in strain-symmetrized, short-period Si/Ge superlattices
• Chapter 54. Optical transitions in strained Ge/Si superlattices
• Chapter 55. In-plane and vertical high frequency conductivity in Si/Ge short-period superlattices
• Chapter 56. Differential optical absorption spectroscopy and X-ray characterization of symmetrically strained Ge–Si superlattices
• Chapter 57. Ambient pressure scanning tunneling microscope imaging of hydrogen-passivated Si/Ge multilayers
• Chapter 58. Photocapacitance studies of short-period Si/Ge superlattices
• Chapter 59. In-plane Raman scattering of [001]-grown Si/Ge superlattices
• Author Index of Volume 222
• Subject Index of Volume 222