Semiconductor Materials Analysis and Fabrication Process Control

G.M. Crean, R. Stuck, J.A. Woollam

• Publisher: North Holland
• Year: 2012
• Print ISBN: 9780444899088
• eBook ISBN: 9780444596918
• Topic: Physical Sciences
• Subtopic: Physics
• Index: Physics

There is a growing awareness that the successful implementation of novel material systems and technology steps in the fabrication of microelectronic and optoelectronic devices, is critically dependent on the understanding and control of the materials, the process steps and their interactions. The contributions in this volume demonstrate that characterisation and analysis techniques are an essential support mechanism for research in these fields. Current major research themes are reviewed both in the development and application of diagnostic techniques for advanced materials analysis and fabrication process control. Two distinct trends are elucidated: the emergence and evaluation of sophisticated in situ optical diagnostic techniques such as photoreflectance and spectroellipsometry and the industrial application of ultra-high sensitivity chemical analysis techniques for contamination monitoring. The volume will serve as a useful and timely overview of this increasingly important field.

Table of contents

• Front Cover
• Semiconductor Materials Analysis and Fabrication Process Control
• Copyright Page
• Table of Contents
• Preface
• Conference Organization
• Supporting Organizations and Sponsors
• Chapter 1. In situ spectroscopic ellipsometry in molecular beam epitaxy for photonic devices
• Chapter 2. Insitu spectral ellipsometry for real-time measurement and control
• Chapter 3. In situ spectroscopic ellipsometry studies of electron cyclotron resonance (ECR) plasma etching of oxides of silicon and GaAs
• Chapter 4. Spectroscopic ellipsometry characterisation of light-emitting porous silicon structures
• Chapter 5. In situ studies of semiconductor processes by spectroellipsometry
• Chapter 6. Growth mode of ultrathin Sb layers on Si studied by spectroscopic ellipsometry and Raman scattering
• Chapter 7. Criteria for the extraction of SIMOX material parameters from spectroscopic ellipsometry data
• Chapter 8. Round robin investigation of silicon oxide on silicon reference materials for ellipsometry
• Chapter 9. Spectroscopic ellipsometric characterization of Si/Si1-xGex strained-layer supperlattices
• Chapter 10. The influence of nanocrystals on the dielectric function of porous silicon
• Chapter 11. Some examples of depth resolution in SIMS analysis
• Chapter 12. Process control for III-V semiconductor device fabrication using mass spectroscopy
• Chapter 13. Sputter induced resonant ionization spectroscopy for trace analysis in silicon
• Chapter 14. Contamination control and ultrasensitive chemical analysis
• Chapter 15. Organic contamination of silicon wafers by buffered oxide etching
• Chapter 16. Application of advanced contamination analysis for qualification of wafer handling systems and chucks
• Chapter 17. In situ optical spectroscopy of surfaces and interfaces with submonolayer resolution
• Chapter 18. Thermal desorption of amorphous arsenic caps from GaAs(100) monitored by reflection anisotropy spectroscopy
• Chapter 19. Optical second harmonic generation from the Si(111)–Sb interface
• Chapter 20. Surface-sensitive multiple internal reflection spectroscopy as a tool to study surface mechanisms in CVD: the example of UV photodeposition of silicon dioxide and silicon nitride
• Chapter 21. On the assessment of local stress distributions in integrated circuits
• Chapter 22. Strain analysis of multilayered silicon-based contact structures
• Chapter 23. In-process control of silicide formation during rapid thermal processing
• Chapter 24. In situ ellipsometry for real-time feedback control of oxidation furnaces
• Chapter 25. Optical characterization of the electrical properties of processed GaAs
• Chapter 26. Optical study of band bending and interface recombination at Sb, S and Se covered gallium arsenide surfaces
• Chapter 27. Photoreflectance investigation of dry-etch-induced damage in semi-insulating GaAs substrates
• Chapter 28. Contactless electromodulation for in situ characterization of semiconductor processing
• Chapter 29. Photoreflectance versus ellipsometry investigation of GaAs/Al0.3Ga0.7As MQW's
• Chapter 30. Temperature dependence of the photoreflectance of strained and lattice-matched InGaAs/InAlAs single quantum wells
• Chapter 31. Optical tools for intermixing diagnostic: application to InGaAs/InGaAsP microstructures
• Chapter 32. Characterization of lattice-matched and strained GalnAs/AlInAs HEMT structures by photoluminescence spectroscopy
• Chapter 33. Interface characterization of strained InGaAs/InP quantum wells after a growth interruption sequence
• Chapter 34. Electric field dependence of allowed and forbidden transitions in In0.53Ga0.47As/In0.52 Al0.48 As single quantum wells by room temperature modulation spectroscopy
• Chapter 35. Optical characterization of InP/InAlAs/InP interfaces grown by MOVPE
• Chapter 36. Temperature dependence analysis of the optical transmission spectra in InGaAs/InP multi quantum well structures
• Chapter 37. Lifetime and diffusion length inhomogeneity controlled by point and extended defect interaction in n-GaAs LEC
• Chapter 38. Mapping of the local minority carrier diffusion length in silicon wafers
• Chapter 39. Evaluation of the minority carrier lifetime and diffusion coefficient of cast polycrystalline silicon wafers by the dual mercury probe method
• Chapter 40. In-situ quality monitoring during the deposition of a-Si:H films
• Chapter 41. Non-destructive identification of end-of-range damage in ion-implanted and annealed silicon
• Chapter 42. Correlation of photoluminescence and nuclear characterization of In-implanted silicon
• Chapter 43. Accurate infrared spectroscopy analysis in back-side damaged silicon wafers
• Chapter 44. Chemical composition of porous silicon layers studied by IR spectroscopy
• Chapter 45. Stoichiometry of oxygen precipitates in silicon
• Chapter 46. Optical characterization of semiconductors containing inhomogeneous layers
• Chapter 47. Nonlinear recombinations in photoreflectance characterization of silicon wafers
• Chapter 48. Investigation of the relaxation of excess carriers in SiGe-heterostructures by photothermal measurement
• Chapter 49. Epioptic analysis of the initial ordered growth of Au on Si(111)
• Chapter 50. Diagnostics of the silicon–insulator interface structure by optical second-harmonic generation
• Chapter 51. Atomic scale simulation of crystal growth applied to the calculation of the photoemission current
• Chapter 52. Potential step imaging of interfaces in MBE-grown structures
• Chapter 53. Using the metal-oxide–polysilicon–silicon (MOPS) structure to determine LPCVD polysilicon quality
• Chapter 54. Combined low-frequency noise and random telegraph signal analysis of silicon MOSFET's
• Chapter 55. Effect of near-surface damage on C–V measurements of Schottky barrier diodes
• Chapter 56. The impact of high-field stressing on C–V characteristics of irradiated gate oxides
• Chapter 57. Effects of diffusion-induced defects on the carrier lifetime
• Chapter 58. In situ bulk lifetime measurement on silicon with a chemically passivated surface
• Chapter 59. Infrared analysis of buried insulator layers formed by ion implantation into silicon
• Chapter 60. Electrochemical etching and profiling of silicon
• Author index
• Subject index