- 430 pages
- English
- ePUB (mobile friendly)
- Available on iOS & Android
About this book
Brings the Band Structure of Carbon-Based Devices into the Limelight
A shift to carbon is positioning biology as a process of synthesis in mainstream engineering. Silicon is quickly being replaced with carbon-based electronics, devices are being reduced down to nanometer scale, and further potential applications are being considered. While traditionally, engineers are trained by way of physics, chemistry, and mathematics, Nanoelectronics: Quantum Engineering of Low-Dimensional Nanoensembles establishes biology as an essential basic science for engineers to explore.
Unifies Science and Engineering: from Quantum Physics to Nanoengineering
Drawing heavily on published papers by the author, this research-driven text offers a complete review of nanoelectronic transport starting from quantum waves, to ohmic and ballistic conduction, and saturation-limited extreme nonequilibrium conditions. In addition, it highlights a new paradigm using non-equilibrium Arora's Distribution Function (NEADF) and establishes this function as the starting point (from band theory to equilibrium to extreme nonequilibrium carrier statistics). The author focuses on nano-electronic device design and development, including carbon-based devices, and provides you with a vantage point for the global outlook on the future of nanoelectronics devices and ULSI.
Encompassing ten chapters, this illuminating text:
- Converts the electric-field response of drift velocity into current–voltage relationships that are driven by the presence of critical voltage and saturation current arising from the unidirectional drift of carriers
- Applies the effect of these scaled-down dimensions to nano-MOSFET (metal–oxide–semiconductor field-effect transistor)
- Considers specialized applications that can be tried through a number of suggested projects that are all feasible with MATLAB® codes
Nanoelectronics: Quantum Engineering of Low-Dimensional Nanoensembles
contains the latest research in nanoelectronics, identifies problems and other factors to consider when it comes to nanolayer design and application, and ponders future trends.
Print Versions of this book also include access to the ebook version.
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Information
Table of contents
- Cover Page
- Halftitle Page
- Title Page
- Copyright Page
- Dedication Page
- Contents
- Preface
- 1 Nanoengineering Overview
- 2 Atoms, Bands, and Quantum Wells
- 3 Carrier Statistics
- 4 Nonequilibrium Carrier Statistics and Transport
- 5 Charge Transport
- 6 Nano-MOSFET and Nano-CMOS
- 7 Nanowire Transport
- 8 Quantum Transport in Carbon-Based Devices
- 9 Magneto- and Quantum-Confined Transport
- 10 Drift-Diffusion and Multivalley Transport
- Appendix A: Physical Constants and Scales
- Appendix B: Silicon Parameters
- Appendix C: Gallium Arsenide Parameters
- Appendix D: Semiconductor Properties
- Appendix E: Metal Properties
- Appendix F: Fermi-Dirac Integral
- Appendix G: Table of Fermi-Dirac Integrals
- Appendix H: Periodic Table
- Appendix I: General Comments on Project Execution
- Appendix J: Published Papers by the Author
- Appendix K: Final Word
- Index