Stress and Strain Engineering at Nanoscale in Semiconductor Devices
eBook - ePub

Stress and Strain Engineering at Nanoscale in Semiconductor Devices

  1. 266 pages
  2. English
  3. ePUB (mobile friendly)
  4. Available on iOS & Android
eBook - ePub

Stress and Strain Engineering at Nanoscale in Semiconductor Devices

About this book

Anticipating a limit to the continuous miniaturization (More-Moore), intense research efforts are being made to co-integrate various functionalities (More-than-Moore) in a single chip. Currently, strain engineering is the main technique used to enhance the performance of advanced semiconductor devices. Written from an engineering applications standpoint, this book encompasses broad areas of semiconductor devices involving the design, simulation, and analysis of Si, heterostructure silicongermanium (SiGe), and III-N compound semiconductor devices. The book provides the background and physical insight needed to understand the new and future developments in the technology CAD (TCAD) design at the nanoscale.

Features

  • Covers stressstrain engineering in semiconductor devices, such as FinFETs and III-V Nitride-based devices

  • Includes comprehensive mobility model for strained substrates in global and local strain techniques and their implementation in device simulations

  • Explains the development of strain/stress relationships and their effects on the band structures of strained substrates

  • Uses design of experiments to find the optimum process conditions

  • Illustrates the use of TCAD for modeling strain-engineered FinFETs for DC and AC performance predictions

This book is for graduate students and researchers studying solid-state devices and materials, microelectronics, systems and controls, power electronics, nanomaterials, and electronic materials and devices.

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Yes, you can access Stress and Strain Engineering at Nanoscale in Semiconductor Devices by Chinmay K. Maiti in PDF and/or ePUB format, as well as other popular books in Physical Sciences & Electrical Engineering & Telecommunications. We have over one million books available in our catalogue for you to explore.

Table of contents

  1. Cover
  2. Half Title
  3. Title Page
  4. Copyright Page
  5. Dedication
  6. Table of Contents
  7. Preface
  8. Author Biography
  9. Chapter 1: Introduction
  10. Chapter 2: Simulation Environment
  11. Chapter 3: Stress Generation Techniques in CMOS Technology
  12. Chapter 4: Electronic Properties of Engineered Substrates
  13. Chapter 5: Bulk-Si FinFETs
  14. Chapter 6: Strain-Engineered FinFETs at NanoScale
  15. Chapter 7: Technology CAD of III-Nitride Based Devices
  16. Chapter 8: Strain-Engineered SiGe Channel TFTs for Flexible Electronics
  17. Index