Silicon Heterostructure Devices
eBook - ePub

Silicon Heterostructure Devices

  1. 472 pages
  2. English
  3. ePUB (mobile friendly)
  4. Available on iOS & Android
eBook - ePub

Silicon Heterostructure Devices

About this book

SiGe HBTs are the most mature of the Si heterostructure devices and not surprisingly the most completely researched and discussed in the technical literature. However, new effects and nuances of device operation are uncovered year-after-year as transistor scaling advances and application targets march steadily upward in frequency and sophistication. Providing a comprehensive treatment of SiGe HBTs, Silicon Heterostructure Devices covers an amazingly diverse set of topics, ranging from basic transistor physics to noise, radiation effects, reliability, and TCAD simulation.

Drawn from the comprehensive and well-reviewed Silicon Heterostructure Handbook, this text explores SiGe heterojunction bipolar transistors (HBTs), heterostructure FETs, various other heterostructure devices, as well as optoelectronic components. The book provides an overview, characteristics, and derivative applications for each device covered. It discusses device physics, broadband noise, performance limits, reliability, engineered substrates, and self-assembling nanostructures. Coverage of optoelectronic devices includes Si/SiGe LEDs, near-infrared detectors, photonic transistors for integrated optoelectronics, and quantum cascade emitters. In addition to this substantial collection of material, the book concludes with a look at the ultimate limits of SiGe HBTs scaling. It contains easy-to-reference appendices on topics including the properties of silicon and germanium, the generalized Moll-Ross relations, and the integral charge-control model, and sample SiGe HBT compact model parameters.

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Yes, you can access Silicon Heterostructure Devices by John D. Cressler in PDF and/or ePUB format, as well as other popular books in Technology & Engineering & Electrical Engineering & Telecommunications. We have over one million books available in our catalogue for you to explore.

Table of contents

  1. Cover Page
  2. Halftitle Page
  3. Title Page
  4. Copyright Page
  5. Dedication Page
  6. Frontmatter
  7. Foreword
  8. Preface
  9. Editor
  10. Contents
  11. 1: The Big Picture
  12. 2: A Brief History of the Field
  13. 3: Overview: SiGe HBTs
  14. 4: Device Physics
  15. 5: Second-Order Effects
  16. 6: Guofu Niu
  17. 7: Broadband Noise
  18. 8: Microscopic Noise Simulation
  19. 9: Linearity
  20. 10: pnp SiGe HBTs
  21. 11: Temperature Effects
  22. 12: Radiation Effects
  23. 13: Reliability Issues
  24. 14: Self-Heating and Thermal Effects
  25. 15: Device-Level Simulation
  26. 16: SiGe HBT Performance Limits
  27. 17: Overview: Heterostructure FETs
  28. 18: Biaxial Strained Si CMOS
  29. 19: Uniaxial Stressed Si MOSFET
  30. 20: SiGe-Channel HFETs
  31. 21: Industry Examples at the State-of-the-Art: Intel’s 90 nm Logic Technologies
  32. 22: Overview: Other Heterostructure Devices
  33. 23: Resonant Tunneling Devices
  34. 24: IMPATT Diodes
  35. 25: Engineered Substrates for Electronic and Optoelectronic Systems
  36. 26: Self-Assembling Nanostructures in Ge(Si)-Si Heteroepitaxy
  37. 27: Overview: Optoelectronic Components
  38. 28: Si-SiGe LEDs
  39. 29: Near-Infrared Detectors
  40. 30: Si-Based Photonic Transistor Devices for Integrated Optoelectronics
  41. 31: Si-SiGe Quantum Cascade Emitters
  42. A. 1 Properties of Silicon and Germanium
  43. A. 2 The Generalized Moll-Ross Relations
  44. A. 3 Integral ChargeControl Relations
  45. A. 4 Sample SiGe HBT Compact Model Parameters
  46. Index