"Ultra-Kurzkanal Tunnel-Feldeffekt-Transistoren auf Silizium- und SOI-Substraten
eBook - PDF

"Ultra-Kurzkanal Tunnel-Feldeffekt-Transistoren auf Silizium- und SOI-Substraten

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  1. 150 pages
  2. English
  3. PDF
  4. Available on iOS & Android
eBook - PDF

"Ultra-Kurzkanal Tunnel-Feldeffekt-Transistoren auf Silizium- und SOI-Substraten

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About this book

Die kontinuierliche Leistungssteigerung von integrierten Schaltungen, welche zu einem großen Teil auf der Miniaturisierung (Scaling) von MOSFETs beruht, wird in den nĂ€chsten Jahren an seine physikalischen Grenzen stoßen. Der Tunnel-Feldeffekt-Transistor (TFET) ist ein neuartiges Bauelement, welches den MOSFET ersetzten könnte. Das Grundprinzip beruht auf der Steuerung von quantenmechanischem Interbandtunneln. In dieser Arbeit wird die Herstellung und Charakterisierung von TFETs mit ultra-kurzen KanallĂ€ngen beschrieben. FĂŒr die Herstellung der TFETs wurde die so genannte Spacer-Gate-Technologie entwickelt; hierbei handelt es sich um einen planaren, selbstjustierenden Prozess. Die Evaluierung des TFET als MOSFET-Nachfolger wurde dadurch um ein wichtiges TeilstĂŒck ergĂ€nzt. Mögliche Anwendungsgebiete von Tunnel-Feldeffekt-Transistoren liegen im Low-Power Bereich wie z. B. Speicherchips oder mobile GerĂ€te.

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Information

Publisher
Cuvillier Verlag
Year
2008
Print ISBN
9783867277150
eBook ISBN
9783736927155
Edition
1

Table of contents