Sub-Micron Semiconductor Devices

Design and Applications

Ashish Raman, Deep Shekhar, Naveen Kumar, Ashish Raman, Deep Shekhar, Naveen Kumar

• Publisher: CRC Press
• Year: 2022
• Print ISBN: 9780367648091
• eBook ISBN: 9781000577259
• Topic: Technology & Engineering
• Subtopic: Electrical Engineering & Telecommunications
• Index: Technology & Engineering

This comprehensive reference text discusses novel semiconductor devices, including nanostructure field-effect transistors, photodiodes, high electron mobility transistors, and oxide-based devices. The text covers submicron semiconductor devices, device modeling, novel materials for devices, novel semiconductor devices, optimization techniques, and their application in detail. It covers such important topics as negative capacitance devices, surface-plasmon resonance devices, Fermi-level pinning, external stimuli-based optimization techniques, optoelectronic devices, and architecture-based optimization techniques.

The book:

• Covers novel semiconductor devices with submicron dimensions
• Discusses comprehensive device optimization techniques
• Examines conceptualization and modeling of semiconductor devices
• Covers circuit and sensor-based application of the novel devices
• Discusses novel materials for next-generation devices

This text will be useful for graduate students and professionals in fields including electrical engineering, electronics and communication engineering, materials science, and nanoscience.

Table of contents

• Cover Page
• Half-Title Page
• Title Page
• Copyright Page
• Contents
• Preface
• Editors
• Contributors
• 1 Fundamental Phenomena in Nanoscale Semiconductor Devices
• 2 Recent Advancements in Growth and Stability of Phosphorene: Prospects for High-Performance Devices
• 3 Study of Transition Metal Dichalcogenides in Junctionless Transistors and Effect of Variation in Dielectric Oxide
• 4 GNRFET-Based Ternary Repeaters: Prospects and Potential Implementation for Efficient GNR Interconnects
• 5 An Effective Study on Particulate Matter (PM) Removal Using Graphene Filter
• 6 Recent Trends in Fabrication of Graphene-Based Devices for Detection of Heavy Metal Ions in Water
• 7 Vertical Tunnel FET Having Dual MOSCAP Geometry
• 8 Leakage Current and Capacitance Reduction in CMOS Technology
• 9 Design of Gate-All-Around TFET with Gate-On-Source for Enhanced Analog Performance
• 10 Solving Schrodinger's Equation for Low-Dimensional Nanostructures for Understanding Quantum Confinement Effects
• 11 Simulation of Reconfigurable FET Circuits Using Sentaurus TCAD Tool
• 12 NEGF Method for Design and Simulation Analysis of Nanoscale MOS Devices
• 13 Performance Investigation of a Novel Si/Ge Heterojunction Asymmetric Double-Gate DLTFET for Low-Power Analog/RF and IoT Applications
• 14 Synthesis of Graphene Nanocomposites Toward the Enhancement of Energy Storage Performance for Supercapacitors
• 15 Design and Analysis of Dopingless Charge-Plasma-Based Ring Architecture of Tunnel Field-Effect Transistor for Low-Power Application
• 16 Hybrid Intelligent Technique-Based Doping Profile Optimization in a Double-Gate Hetero-Dielectric TFET
• 17 Graphene Nanoribbon Devices: Advances in Fabrication and Applications
• 18 Design and Analysis of Various Neural Preamplifier Circuits
• 19 Design and Analysis of Transition Metal Dichalcogenide-Based Feedback Transistor
• 20 Reduced Graphene-Metal Phthalocyanine-Based Nanohybrids for Gas-Sensing Applications
• 21 Phosphorene Multigate Field-Effect Transistors for High-Frequency Applications
• 22 Analytical Modeling of Reconfigurable Transistors
• 23 Flexi-Grid Technology: A Necessity for Spectral Resource Utilization
• Index