
- 324 pages
- English
- ePUB (mobile friendly)
- Available on iOS & Android
About this book
This book deals with 3D nanodevices such as nanowire and nanosheet transistors at 7 nm and smaller technology nodes. It discusses technology computer-aided design (TCAD) simulations of stress- and strain-engineered advanced semiconductor devices, including III-nitride and RF FDSOI CMOS, for flexible and stretchable electronics. The book focuses on how to set up 3D TCAD simulation tools, from mask layout to process and device simulation, including fabless intelligent manufacturing. The simulation examples chosen are from the most popular devices in use today and provide useful technology and device physics insights. In order to extend the role of TCAD in the More-than-Moore era, the design issues related to strain engineering for flexible and stretchable electronics have been introduced for the first time.
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Information
Table of contents
- Cover Page
- Half Title page
- Title Page
- Copyright Page
- Dedication
- Contents
- Preface
- List of Abbreviations
- 1 Introduction
- 2 Fabless Intelligent Manufacturing
- 3 Simulation Environment
- 4 Nanowire Transistors
- 5 Nanosheet Transistors
- 6 III-Nitride Flexible Electronic Devices
- 7 FDSOI RF Flexible Electronics
- 8 Simulation at Atomic Scale
- Index