Nonlinear Transistor Model Parameter Extraction Techniques

Matthias Rudolph, Christian Fager, David E. Root

• Publisher: Cambridge University Press
• Year: 2011
• Print ISBN: 9780521762106
• eBook ISBN: 9781139153669
• Topic: Technology & Engineering
• Subtopic: Microwaves
• Index: Technology & Engineering

Achieve accurate and reliable parameter extraction using this complete survey of state-of-the-art techniques and methods. A team of experts from industry and academia provides you with insights into a range of key topics, including parasitics, intrinsic extraction, statistics, extraction uncertainty, nonlinear and DC parameters, self-heating and traps, noise, and package effects. Learn how similar approaches to parameter extraction can be applied to different technologies. A variety of real-world industrial examples and measurement results show you how the theories and methods presented can be used in practice. Whether you use transistor models for evaluation of device processing and you need to understand the methods behind the models you use, or you want to develop models for existing and new device types, this is your complete guide to parameter extraction.

Table of contents

• Cover
• Nonlinear Transistor Model Parameter Extraction Techniques
• The Cambridge RF and Microwave Engineering Series
• Title
• Copyright
• Contents
• List of contributors
• Preface
• 1 Introduction
• 2 DC and thermal modeling: III--V FETs and HBTs
• 3 Extrinsic parameter and parasitic elements in III--V HBT and HEMT modeling
• 4 Uncertainties in small-signal equivalent circuit modeling
• 5 The large-signal model: theoretical foundations, practical considerations, and recent trends
• 6 Large and packaged transistors
• 7 Nonlinear characterization and modeling of dispersive effects in high-frequency power transistors
• 8 Optimizing microwave measurements for model construction and validation
• 9 Practical statistical simulation for efficient circuit design
• 10 Noise modeling
• Index