Electromigration in Metals

Fundamentals to Nano-Interconnects

Paul S. Ho, Chao-Kun Hu, Martin Gall, Valeriy Sukharev

• Publisher: Cambridge University Press
• Year: 2022
• Print ISBN:
  9781107032385
• eBook ISBN:
  9781009287791
• Topic: Technology & Engineering
• Subtopic: Materials Science
• Index: Technology & Engineering

Learn to assess electromigration reliability and design more resilient chips in this comprehensive and practical resource. Beginning with fundamental physics and building to advanced methodologies, this book enables the reader to develop highly reliable on-chip wiring stacks and power grids. Through a detailed review on the role of microstructure, interfaces and processing on electromigration reliability, as well as characterisation, testing and analysis, the book follows the development of on-chip interconnects from microscale to nanoscale. Practical modeling methodologies for statistical analysis, from simple 1D approximation to complex 3D description, can be used for step-by-step development of reliable on-chip wiring stacks and industrial-grade power/ground grids. This is an ideal resource for materials scientists and reliability and chip design engineers.

Table of contents

• Cover
• Half-title
• Title Page
• Copyright Information
• Dedication
• Contents
• Preface
• 1 Introduction to Electromigration
• 2 Fundamentals of Electromigration
• 3 Thermal Stress Characteristics and Stress-Induced Void Formation in Aluminum and Copper Interconnects
• 4 Stress Evolution and Damage Formation in Confined Metal Lines under Electric Stressing: 1D Analysis
• 5 Electromigration in Cu Interconnect Structures
• 6 Scaling Effects on Microstructure of Cu and Co Nanointerconnects
• 7 Analysis of Electromigration-Induced Stress Evolution and Voiding in Cu Damascene Lines with Microstructure
• 8 Massive-Scale Statistical Studies for Electromigration
• 9 Assessment of Electromigration Damage in Large On-Chip Power Grids
• Index