Fundamentals of Modern VLSI Devices

Yuan Taur, Tak H. Ning

• Publisher: Cambridge University Press
• Year: 2021
• Print ISBN: 9781108480024
• eBook ISBN: 9781108848053
• Edition: 3
• Topic: Technology & Engineering
• Subtopic: Electrical Engineering & Telecommunications
• Index: Technology & Engineering

A thoroughly updated third edition of an classic and widely adopted text, perfect for practical transistor design and in the classroom. Covering a variety of recent developments, the internationally renowned authors discuss in detail the basic properties and designs of modern VLSI devices, as well as factors affecting performance. Containing around 25% new material, coverage has been expanded to include high-k gate dielectrics, metal gate technology, strained silicon mobility, non-GCA (Gradual Channel Approximation) modelling of MOSFETs, short-channel FinFETS, and symmetric lateral bipolar transistors on SOI. Chapters have been reorganized to integrate the appendices into the main text to enable a smoother learning experience, and numerous additional end-of-chapter homework exercises (+30%) are included to engage students with real-world problems and test their understanding. A perfect text for senior undergraduate and graduate students taking advanced semiconductor devices courses, and for practicing silicon device professionals in the semiconductor industry.

Table of contents

• Cover
• Half-title
• Title page
• Copyright information
• Contents
• Preface to the Third Edition
• Preface to the Second Edition
• Preface to the First Edition
• Physical Constants and Unit Conversions
• List of Symbols
• 1 Introduction
• 2 Basic Device Physics
• 3 p-n Junctions and Metal-Silicon Contacts
• 4 MOS Capacitors
• 5 MOSFETs: Long Channel
• 6 MOSFETs: Short Channel
• 7 Silicon-on-Insulator and Double-Gate MOSFETs
• 8 CMOS Performance Factors
• 9 Bipolar Devices
• 10 Bipolar Device Design
• 11 Bipolar Performance Factors
• 12 Memory Devices
• References
• Index