Advanced Ultra Low-Power Semiconductor Devices

Design and Applications

Shubham Tayal, Abhishek Kumar Upadhyay, Shiromani Balmukund Rahi, Young Suh Song

• Publisher: Wiley-Scrivener
• Year: 2023
• Print ISBN: 9781394166411
• eBook ISBN: 9781394167623
• Edition: 1
• Topic: Technology & Engineering
• Subtopic: Electrical Engineering & Telecommunications
• Index: Technology & Engineering

ADVANCED ULTRA LOW-POWER SEMICONDUCTOR DEVICES

Written and edited by a team of experts in the field, this important new volume broadly covers the design and applications of metal oxide semiconductor field effect transistors.

This outstanding new volume offers a comprehensive overview of cutting-edge semiconductor components tailored for ultra-low power applications. These components, pivotal to the foundation of electronic devices, play a central role in shaping the landscape of electronics. With a focus on emerging low-power electronic devices and their application across domains like wireless communication, biosensing, and circuits, this book presents an invaluable resource for understanding this dynamic field.

Bringing together experts and researchers from various facets of the VLSI domain, the book addresses the challenges posed by advanced low-power devices. This collaborative effort aims to propel engineering innovations and refine the practical implementation of these technologies. Specific chapters delve into intricate topics such as Tunnel FET, negative capacitance FET device circuits, and advanced FETs tailored for diverse circuit applications.

Beyond device-centric discussions, the book delves into the design intricacies of low-power memory systems, the fascinating realm of neuromorphic computing, and the pivotal issue of thermal reliability. Authors provide a robust foundation in device physics and circuitry while also exploring novel materials and architectures like transistors built on pioneering channel/dielectric materials. This exploration is driven by the need to achieve both minimal power consumption and ultra-fast switching speeds, meeting the relentless demands of the semiconductor industry. The book's scope encompasses concepts like MOSFET, FinFET, GAA MOSFET, the 5-nm and 7-nm technology nodes, NCFET, ferroelectric materials, subthreshold swing, high-k materials, as well as advanced and emerging materials pivotal for the semiconductor industry's future.

Table of contents

• Cover
• Table of Contents
• Series Page
• Title Page
• Copyright
• Preface
• 1 Subthreshold Transistors: Concept and Technology
• 2 Introduction to Conventional MOSFET and Advanced Transistor TFET
• 3 Operation Principle and Fabrication of TFET
• 4 Mathematical Modeling of TFET and Its Future Applications: Ultra Low-Power SRAM Circuit and III-IV TFET
• 5 Analysis of Channel Doping Variation on Transfer Characteristics to High Frequency Performance of F-TFET
• 6 Comparative Study of Gate Engineered TFETs and Optimization of Ferroelectric Heterogate TFET Structure
• 7 State of the Art Tunnel FETs for Low Power Memory Applications
• 8 Epitaxial Layer-Based Si/SiGe Hetero-Junction Line Tunnel FETs: A Physical Insight
• 9 Investigation of Thermal Performance on Conventional and Junctionless Nanosheet Field Effect Transistors
• 10 Introduction to Newly Adopted NCFET and Ferroelectrics for Low-Power Application
• 11 Application of Ferroelectrics: Monolithic-3D Inference Engine with IGZO Based Ferroelectric Thin Film Transistor Synapses
• 12 Radiation Effects and Their Impact on SRAM Design: A Comprehensive Survey with Contemporary Challenges
• 13 Final Summary and Future of Advanced Ultra Low Power Metal Oxide Semiconductor Field Effect Transistors
• Index
• Also of Interest
• End User License Agreement