Advanced Nanoscale MOSFET Architectures

Current Trends and Future Perspectives

Kalyan Biswas, Angsuman Sarkar

• Publisher: Wiley-IEEE Press
• Year: 2024
• Print ISBN: 9781394188949
• eBook ISBN: 9781394188956
• Edition: 1
• Topic: Technology & Engineering
• Subtopic: Electrical Engineering & Telecommunications
• Index: Technology & Engineering

Comprehensive reference on the fundamental principles and basic physics dictating metal–oxide–semiconductor field-effect transistor (MOSFET) operation

Advanced Nanoscale MOSFET Architectures provides an in-depth review of modern metal–oxide–semiconductor field-effect transistor (MOSFET) device technologies and advancements, with information on their operation, various architectures, fabrication, materials, modeling and simulation methods, circuit applications, and other aspects related to nanoscale MOSFET technology.

The text begins with an introduction to the foundational technology before moving on to describe challenges associated with the scaling of nanoscale devices. Other topics covered include device physics and operation, strain engineering for highly scaled MOSFETs, tunnel FET, graphene based field effect transistors, and more. The text also compares silicon bulk and devices, nanosheet transistors and introduces low-power circuit design using advanced MOSFETs.

Additional topics covered include:

• High-k gate dielectrics and metal gate electrodes for multi-gate MOSFETs, covering gate stack processing and metal gate modification
• Strain engineering in 3D complementary metal-oxide semiconductors (CMOS) and its scaling impact, and strain engineering in silicon–germanium (SiGe) FinFET and its challenges and future perspectives
• TCAD simulation of multi-gate MOSFET, covering model calibration and device performance for analog and RF applications
• Description of the design of an analog amplifier circuit using digital CMOS technology of SCL for ultra-low power VLSI applications

Advanced Nanoscale MOSFET Architectures helps readers understand device physics and design of new structures and material compositions, making it an important resource for the researchers and professionals who are carrying out research in the field, along with students in related programs of study.

Table of contents

• Cover
• Table of Contents
• Title Page
• Copyright
• About the Editors
• List of Contributors
• Preface
• Acknowledgments
• 1 Emerging MOSFET Technologies
• 2 MOSFET: Device Physics and Operation
• 3 High-κ Dielectrics in Next Generation VLSI/Mixed Signal Circuits
• 4 Consequential Effects of Trap Charges on Dielectric Defects for MU-G FET
• 5 Strain Engineering for Highly Scaled MOSFETs
• 6 TCAD Analysis of Linearity Performance on Modified Ferroelectric Layer in FET Device with Spacer
• 7 Electrically Doped Nano Devices: A First Principle Paradigm
• 8 Tunnel FET: Principles and Operations
• 9 GaN Devices for Optoelectronics Applications
• 10 First Principles Theoretical Design on Graphene-Based Field-Effect Transistors
• 11 Performance Analysis of Nanosheet Transistors for Analog ICs
• 12 Low-Power Analog Amplifier Design using MOS Transistor in the Weak Inversion Mode
• 13 Ultra-conductive Junctionless Tunnel Field-effect Transistor-based Biosensor with Negative Capacitance
• 14 Conclusion and Future Perspectives
• Index
• End User License Agreement