Microscopy of Semiconducting Materials

1999 Proceedings of the Institute of Physics Conference held 22-25 March 1999, University of Oxford, UK

A.G Cullis, R Beanland

• Publisher: CRC Press
• Year: 2000
• Print ISBN: 9780750306508
• eBook ISBN: 9781040076781
• Edition: 1
• Topic: Physical Sciences
• Subtopic: Electrical Engineering & Telecommunications

With IC technology continuing to advance, the analysis of very small structures remains critically important. Microscopy of Semiconducting Materials provides an overview of advances in semiconductor studies using microscopy. The book explores the use of transmission and scanning electron microscopy, ultrafine electron probes, and EELS to investigat

Table of contents

• Cover
• Half Title
• Series Page
• Title Page
• Copyright Page
• Table of Contents
• Preface
• Advances in high resolution imaging and microanalysis of Si, GaAs and GaN
• Atomic resolution microscopy of semiconductor defects and interfaces
• Impact of strain relaxation induced local crystal tilts on the quantitative evaluation of microstructure by high-resolution transmission electron microscopy
• Strain mapping in semiconductor heterostructures using HREM
• PEELS imaging and linescan study of concentration anisotropies in AlxGa1-xAs and InyGa1-y As heterostructures grown on non-planar substrates
• Analytical electron microscopy of III-V quantum dot structures
• Elemental mapping of semiconductor devices using energyfiltering transmission electron microscopy
• Atomic reorganisation studies from HRTEM images
• The modified structure of amorphous Ge near Si(111) substrates
• Measurements of local lattice strains in self-assembled InAs quantum dots: A high resolution transmission electron microscopy study
• The atomic structure of dislocations and planar boundaries in GaN
• On deformation and fracture of semiconductors
• Dislocation bundles in GaAs substrates: assessed by X-ray and Makyoh topography, X-ray diffraction, TEM, scanning infrared polariscopy, light interferometry, and Nomarski microscopy
• Transmission electron microscopy investigations of the defect formation during Zn-diffusion in GaP and GaSb
• A study of defects in LEC GaAs after copper diffusion
• Micropipes in SiC represent Frank’s hollow dislocations
• Planar, linear and point defects in high purity CVD diamond
• Electrically active grain boundaries in GaP
• Formation of microcracks in an annealed cubic boron nitride
• Growth phenomena of quantum dot structures in the InGaAs system
• Real time observations of the growth and development of self-assembled GeSi islands on Si(001)
• Size and shape engineering of vertically-stacked InAs quantum dots
• Effect of growth rate on the morphology and composition of InAs quantum dots grown on GaAs by MBE
• Investigation of CdSe/ZnSe quantum dot structures by composition evaluation by lattice fringe analysis
• Application of spatially resolved electron energy-loss spectroscopy to the quantitative analysis of semiconducting layer structures
• Morphological instability of strained-layer superlattices grown on vicinal substrates
• Self-assembled InSb quantum dots in InAs and GaSb matrices assessed by means of TEM, AFM and PL
• TEM characterisation of free standing GaInP StranskiKrastanow islands grown by MOVPE on GaP substrates
• Impact of surface morphology on InAs(P) island formation on InP
• Computer-aided analysis of TEM micrographs of CdSe quantum dots on ZnSe
• TEM investigation of MBE grown self-assembled CdSe/ZnSe islands
• Characterisation of SnO2 nanopowders obtained by liquid pyrolysis for gas monitoring
• A kinetics study of the growth of Ge precipitates in SiO2 by coupling TEM and EELS
• In situ scanning electron microscopy of epitaxial processes
• Bismuth and antimony nanolines in a Sin opitarial layer
• Phase separation and facet formation during the growth of (GaAs)1-xGe2x alloy layers by metal organic vapour phase epitaxy
• Optical properties of anti-phase boundaries and Frenkel-type defects in CuPt-ordered GaInP studied by optical spectroscopy in a transmission electron microscope
• Formation and evolution of antiphase boundaries during epitaxial growth of partially ordered Ga0.5In0.5P
• Contrast analysis in TEM images of InGaAs/GaAs strained layers grown on non-planar substrates
• Microcharacterisation of MOVPE-grown AlAsSb/GaAsSb superlattices by STEM
• Growth characterisation of InAlAs/InGaAs structures on InP non (001) index substrates
• X-ray diffraction tools and methods for semiconductor analysis
• The influence of NaCl on the microstructure of CdS films and CdTe solar cells
• Limitations to homoepitaxial silicon growth in plasma-enhanced chemical vapour deposition at low temperatures
• An investigation of segregation-induced interface broadening in p-channel SiGe/Si MOSFET device structures by electron energyloss imaging
• Strain and Ge concentration determinations in SiGe/Si multiple quantum wells by TEM methods
• Study of the relaxation in InGaAs SQW grown on (111)B substrates
• TEM study of an anti-correlation relation in corrugated layers of Si1-xGex(C)/Si superlattices
• Hall photovoltage imaging of the carrier flux in a 2DEG using an optical fibre
• A cross-sectional HRTEM study of particle defects in an epitaxial diamond film
• CBED to determine the lattice parameters of strained SiC films on 6H-SiC substrates
• Structure of SiC layers grown by LPE in microgravity and on-ground conditions
• TEM and XRD analysis of CuInS  2 layers for solar cell applications
• Electron microscopy study of indium oxide thin films.
• Microstructures of Y2O3 films grown on Si (111) by ionized cluster beam
• Dislocation dynamics in graded relaxed SiGe/Si, InGaAs/GaAs, and InGaP/GaP
• Climb/glide dislocation sources at low misfit GexSi1-x/Si(001) interfaces
• Dislocation blocking in strained layers grown on vicinal substrates
• Mechanisms of the formation of structural defects during low temperature growth of GaAs
• TEM Study of ordered domain structures in Te-doped GaInP layers grown by organometallic vapour phase epitaxy
• Formation model for microstructures in a (AI, Ga, In)P natural superlattice
• Ordering and domain structures in Mg-doped GaInP layers
• Formation of edge-type misfit dislocations in In0.15Ga0.85As/GaAs heterostructures during thermal processing
• Study of plastic relaxation of layer stress in ZnSe/GaAs(001) heterostructures
• Anisotropic lattice mismatch accommodation in the epitaxial MnAs/GaAs-system
• Structural properties of compressive and tensile strained InGaAs/InP heterostructures
• TEM study of defects formed in InGaAs/GaAs and InGaAs/InP heterostructure devices
• Structural study of GaAs/GaAs twist-bonded compliant substrates
• Structural analysis of epitaxial Si layers grown on porous silicon
• X-ray diffraction measurements of strained and relaxed SiGe epitaxial layers on Si
• Characterization of surface steps on heteroepitaxial 3C-SiC thin films by TEM
• Lateral- and pendeo-epitaxial growth and characterization of low defect density GaN thin films
• Microscale luminescence from ELOG specimens on (0001) sapphire
• STEM investigations of GaN
• Spatially resolved low-loss EELS analysis of optical properties of GaN and related alloys
• Electron holography studies of piezoelectric fields in InGaN/GaN layers
• Spontaneous polarisation of AIN measured by electron holography
• The structure of GaN films grown on a-plane sapphire by MOCVD
• The Stranski-Krastanov growth mode of GaN on AIN
• Investigation of the atomic structure of [0001] tilt grain boundaries in GaN/sapphire epitaxial layers
• Inversion domain nucleation in homoepitaxial GaN
• HREM analysis of planar defects in GaN layers grown on (0001) Al2O3 vicinal surfaces
• Growth of GaN layers onto misoriented (0001) sapphire by MOCVD
• Comparison of the interfacial relaxation between AlN/Al2O3(0001) and AlN/6H-SiC(0001) studied with TEM
• Structural characterisation of AlGaN/AIN/Si(111) heterostructures by transmission electron microscopy
• Crystalline quality of InxGa1.xN samples assessed by SEM, Raman and PL
• Investigation of composition fluctuations in InxGa1-xN
• Energy selected elemental analysis of InGaN multiple quantum wells in GaN
• A TEM assessment of GaN/SiC layers grown by MBE
• Excitonic transitions in cubic AlGaN
• Electrical activity of dislocations in GaN epilayers
• TEM for process development of silicon devices
• Void formation at the interface of bonded hydrogen-terminated (100) silicon wafers
• Morphology and defects in shallow trench isolation structures
• Strain determination in submicron isolation structures by TEM/CBED
• Measurement of thin silicon oxide/nitride/oxide layers using transmission electron microscopy
• Transmission electron microscopy studies of silicon-based electron waveguides fabricated by oxidation of etched ridges on buried oxide layers
• Studies of low-energy ion implantation in silicon
• Chemical bevelling and SIMS linescan analysis of low energy boron implanted silicon
• Indium implantation in silicon: TEM, RBS and SIMS characterization
• A novel method for studying the regrowth of implanted silicon
• Enhanced interfacial oxide break up and polysilicon regrowth using a methanol-last wafer preclean and a fluorine implant
• Deactivation and diffusion of boron in ion-implanted silicon: dopant mapping through secondary electron imaging
• TEM and AFM studies of selectively etched Si specimens to determine 2-D dopant profiles associated with n+-p junctions
• Two-dimensional dopant profiling in shallow junctions using TEM and scanning capacitance microscopy
• Clustering of vacancies on {113} planes in Si layers close to Si- Si3 N4 interfaces and further aggregation of self-interstitials inside vacancy clusters during electron irradiation
• Polycrystalline silicon - silicon nitride multilayers
• Defect characterization of multicrystalline silicon for solar cell applications
• New insights into the formation processes of macropores in n-Si(001) and p-Si(001)
• Transmission electron microscopy studies of photochemically etched porous silicon
• Oxide layers on 6H silicon carbide substrates
• Effect of the temperature ramp rate during carbonization of Si (111) on the crystalline quality of SiC produced
• HREM investigation of structural defects in AI- and B- implanted 4H and 6H SiC
• Comparison of defect formation in O+- and Ne+-implanted 6H-SiC
• A crystalline (amorphous) silicon bubble 3-D lattice in a synthetic opal matrix
• EFTEM study of Ti/TiN and Co-silicide thin films at crosssections of device structures
• Characterisation of tungsten nitride barrier layer for copper metallisation
• HRTEM and EFTEM studies of the evolution of Cu/Ta/SiO2/Si interfaces in ULSI devices
• Titanium disilicide nanoislands on Si(001) surfaces
• Nucleation and growth of CoSi2 dots on Si(001)
• Superconducting contacts to a two-dimensional electron gas
• Microstructural investigation of oxidized Ni/Au ohmic contact to p-type GaN
• Microstructure of TiN layers used as ohmic contacts on GaN
• Comparison of the growth mode of intimate In contacts deposited at room and cryogenic temperatures on (100) InGaAs and InAlAs self-decomposed layers
• Applications and problems for TEM of semiconductor products
• Focused ion beam microscopy investigation of InGaP/GaAs heterojunction bipolar transistors
• TEM investigation of wet oxidised AIAs in VCSEL structures
• Focused ion beam specimen preparation for transmission electron microscopy studies of ULSI devices
• High sensitivity FIB-SIMS analysis of semiconductor devices
• Focused ion beam control of sample cleaving for high resolution microscopy
• Interface-related artefacts in iodine-ion milling of ZnSe on GaAs grown by metal-organic vapour phase epitaxy
• Scanning capacitance microscopy imaging of state-of-the-art MOSFETs
• Scanning capacitance microscopy on cross section and bevelled samples
• Investigations of p-i-n junctions with nanoscale corrugations
• Imaging sub-surface dopant and free electron distributions using scanning tunnelling microscopy
• An elevated temperature STM study of the Si(001)c(4×4) surface reconstruction
• A combined STM/AFM/TEM study of CdTe/CdS solar cell material grown on glass
• Contribution of cathodoluminescence and electron beam induced current to microscale evaluation of semiconducting heterostructures
• Cathodoluminescence studies of individual GaN dots grown by MOCVD on SiC substrates
• Cathodoluminescence study of low-dimensional quantum structures grown on patterned GaAs(311)A substrates
• Low-temperature spectral CL study of growth-induced defects in butt-coupled strain compensated InGaAs/ InGaAsP/ InP MQW amplifier-waveguide devices for semiconductor optical amplifiers
• Low temperature scanning cathodoluminescence studies of proton isolated GaAs / AlGaAs vertical cavity surface emitting lasers
• Effect of proton irradiation on the spatial defect distribution of n+-p InP/Si solar cells
• Novel applications of EBIC and CL to regrown, modulationdoped structures on patterned substrates
• EBIC and CL imaging of self-organised quantum dot clusters and wetting layers in modulation-doped structures
• EBIC studies of heterojunction bipolar transistors
• Potential errors in quantitative EBIC studies caused by low resistance specimens
• Growth spirals and morphology in vapour deposited ZnS
• SEM EBIC characterization of SiC/Si solar cells
• A REBIC and EBSP study of a Σ=13 grain boundary in silicon
• Nanoanalysis of local electrical fields in silicon diodes by STEBIC
• Optoelectronic characterisation of semiconducting materials in a scanning near-field optical microscope
• Axial field measurements on a high resolution portable scanning electron microscope column
• SEM and TEM analysis of semiconducting SrTiO3 ceramic devices
• FEG-SEM imaging of semiconductor dopant contrast
• Change of BSE spectrum on the edge of a surface step
• Contactless characterization of semiconductor structures by the Surface Electron Beam Induced Voltage method
• Author Index
• Subject Index