GaN Transistor Modeling for RF and Power Electronics

Using The ASM-HEMT Model

Yogesh Singh Chauhan, Ahtisham Ul Haq Pampori, Sheikh Aamir Ahsan

• Publisher: Woodhead Publishing
• Year: 2024
• Print ISBN:
  9780323998710
• eBook ISBN:
  9780323999403
• Topic: Technology & Engineering
• Subtopic: Electrical Engineering & Telecommunications
• Index: Technology & Engineering

GaN Transistor Modeling for RF and Power Electronics: Using The ASM-GaN-HEMT Model covers all aspects of characterization and modeling of GaN transistors for both RF and Power electronics applications. Chapters cover an in-depth analysis of the industry standard compact model ASM-HEMT for GaN transistors. The book details the core surface-potential calculations and a variety of real device effects, including trapping, self-heating, field plate effects, and more to replicate realistic device behavior. The authors also include chapters on step-by-step parameter extraction procedures for the ASM-HEMT model and benchmark test results. GaN is the fastest emerging technology for RF circuits as well as power electronics. This technology is going to grow at an exponential rate over the next decade. This book is envisioned to serve as an excellent reference for the emerging GaN technology, especially for circuit designers, materials science specialists, device engineers and academic researchers and students. - Provides an overview of the operation and physics of GaN-based transistors - Features in-depth description (by the developers of the model) of all aspects of the industry standard ASM-HEMT model for GaN circuits - Details parameter extraction of GaN devices and measurement data requirements for GaN model extraction

Table of contents

• Cover
• Front Matter
• Table of Contents
• Copyright
• Contents
• Preface
• List of Illustrations
• List of Tables
• 1 : GaN HEMTs: Physics and device technology for power and RF
• 2 : Modeling approaches for GaN HEMTs: Classification and details
• 3 : Surface potential, 2DEG, and the drain current model: Model core calculations
• 4 : Self-heating and temperature effects: Modeling and validation
• 5 : Noise and gate currents: Flicker noise, thermionic emission, tunneling
• 6 : GaN power device characterization: Theory and methods
• 7 : Terminal charges and capacitances: Field-plate devices for power applications
• 8 : GaN trapping: Trapping physics and models in ASM-GaN-HEMT
• 9 : RF characterization of AlGaN/GaN HEMTs: Theory and techniques
• 10 : RF modeling – I: Model definition, extraction methodology, small-signal and large-signal validation
• 11 : RF modeling – II: RF extraction methodology for large-periphery devices, stability analysis, RF kink effects
• 12 : Parameter extraction: Step-by-step extraction methodology
• 13 : Model quality testing: Symmetry tests
• Index
• A