Deep Implants: Fundamentals and Applications

G.G. Bentini, A. Golanski, S. Kalbitzer

• Publisher: North Holland
• Year: 1989
• Print ISBN: 9780444873323
• eBook ISBN: 9780444596376
• Topic: Physical Sciences
• Subtopic: Physics
• Index: Physics

Deep implants are produced by the high-energy implantation of impurities in a host material. The thus created subsurface layers have properties that are different from the very surface and the bulk and show great promise for application in the electronics industry.

Table of contents

• Front Cover
• Deep Implants
• Copyright Page
• Table of Contents
• Chapter 1. Future very-large-scale integration technology
• Chapter 2. The δ doping layer: electronic properties and device perspectives
• Chapter 3. High temperature superconducting ceramics
• Chapter 4. Megaelectronvolt implantations in silicon very-large-scale integration
• Chapter 5. High energy implanted transistor fabrication
• Chapter 6. Dynamic computer simulation of high energy ion implantation
• Chapter 7. Lupin-3D: a three-dimensional calculation of damage energy distribution and cascade parameters for ion-implanted materials
• Chapter 8. Monte carlo simulations of ion implantation in crystalline targets
• Chapter 9. Interaction of megaelectronvolt ion beams with silicon: amorphization, recrystallization and diffusion
• Chapter 10. Depth distributions of megaelectronvolt 14N implanted into various solids at elevated fluences
• Chapter 11. Experimental and calculated range moments of deep implants
• Chapter 12. Depth profiles and damage annealing of 1.06 MeV As2+ implanted in silicon
• Chapter 13. Implants of 15–50 MeV boron ions into silicon
• Chapter 14. Results of boron implantation into silicon diodes and metal–oxide–semiconductor gate-controlled turn-off thyristors
• Chapter 15. Beryllium-bombarded In0.53 Ga0.47As and InP Photocondutors with Response Times below 3 ps
• Chapter 16. Proton-irradiated silicon: complete electrical characterization of the induced dominant deep defects after long-term annealing
• Chapter 17. A study of the distribution of hydrogen and strain in proton-bombarded liquid-encapsulated Czochralski-grown GaAs by double-crystal X-ray diffraction and secondary ion mass spectrometry
• Chapter 18. Comparison between "intermediate"- and "heavy"-ion-bombardment-induced silicon amorphization at room temperature
• Chapter 19. Electronic properties of defects created by 1.6 GeV argon ions in silicon
• Chapter 20. Current status of the technology of silicon separated by implantation of oxygen
• Chapter 21. A silicon-on-insulator structure formed by implantation of megaelectronvolt oxygen
• Chapter 22. Non-destructive characterization of nitrogen-implanted silicon-on-insulator structures by spectroscopic ellipsometry
• Chapter 23. Deep implants by channeling implantation
• Chapter 24. Lattice damage and suicide formation by deep implantations into silicon
• Chapter 25. Growth of buried silicon nitride layers induced by fast thermal annealing of N2 + -implanted silicon substrates
• Chapter 26. Piezoresistive properties under hydrostatic pressure of silicon layers separated by oxygen implantation
• Chapter 27. Ion beam effects on polymers: the influence of energy loss and molecular parameters
• Chapter 28. Photoresist outgassing and carbonization during high energy ion implantation
• Chapter 29. Modifications by rare gas bombardment of aluminium nitride formed by direct implantation
• Chapter 30. Nitrogen implantation into metals: a numerical model to explain the high temperature shape of the nitrogen depth profile
• Chapter 31. Temperature and dose dependences of nitrogen implantation into iron
• Chapter 32. Investigation of the Ag–Si interface formed under simultaneous irradiation using a high energy ion beam
• Chapter 33. Thermal wave characterization of silicon which had been high energy ion implanted and furnace annealed
• Chapter 34. An approach to a new machine design for implantation at medium and high energies
• Chapter 35. ARAMIS: an accelerator for research on astrophysics, microanalysis and implantation in solids
• Chapter 36. Linear-accelerator-based high energy implanter with milliampere capability
• Chapter 37. Design study of high energy, high current, r.f. accelerators for ion implantation
• Chapter 38. The Dynamitron tandem accelerator—a useful tool for ion beam applications
• Chapter 39. Features and applications of a versatile megavolt ion accelerator
• Chapter 40. Megaelectronvolt implants into GaAs using a hot-cathode Penning ion source
• Author Index
• Subject Index