Nanoelectronic Devices and Applications

Trupti Ranjan Lenka, Hieu Pham Trung Nguyen

• Publisher: Bentham Science Publishers
• Year: 2024
• Print ISBN: 9789815238266
• eBook ISBN: 9789815238242
• Topic: Technologie et ingénierie
• Subtopic: Nanotechnologie et MEMS

Nanoelectronic Devices and Applications presents reviews on recent advances in nanoelectronic device design and new directions for their practical use. The volume includes 16 edited chapters that cover novel material systems, band engineering, modelling and simulations, fabrication and characterization techniques, and their emerging applications. The discussions presented in this book are based on current understandings on innovations and future trends, and references are provided for advanced scholars. Chapter 1 presents an overview of recent innovations and future prospects in III-nitride semiconductor technologies for RF, power, digital and quantum applications. Chapter 2 reports new trends in GaN-based optical devices for sensing and micro-display applications. Chapter 3 shows current interests in nanophosphors and their utilizations in improving device performance of InGaN nanowire light-emitting diodes (LEDs). Recent studies on the effect of potential profile on the carrier transport in AlGaAs based double quantum well structures and their applications are presented in Chapter 4. The recent progress in high-electron-mobility transistors (HEMTs) is presented through Chapters 5, 6, and 7. A comprehensive review on ?-Ga2O3 emphasizing material properties, growth approaches, and its applications for next-generation high-power nanoelectronics; the effect of dielectric layers on the characteristics of AlN/?-Ga2O3 HEMTs are presented in Chapter 8 and 9 respectively. Chapters 10-14 summarize the recent studies in field-effect transistors (FETs) adopting different materials and structures. Chapter 15 presents current research in 2D Tungsten Diselenide (WSe2) with special focus on the material properties, device structures, applications, and challenges. Finally, Chapter 16 presents a systematic review of memristors, and memristive semiconductor devices. The book is intended as a primary resource for elective subjects in advanced electronics and computer engineering courses at university level. Researchers and industry professionals will also learn about emerging trends and state-of-the-art research in nanoelectronics. Readership Students in advanced engineering courses; researchers and industry professionals.

Table of contents

• Welcome
• Table of Content
• Title
• BENTHAM SCIENCE PUBLISHERS LTD.
• PREFACE
• List of Contributors
• Advancements in GaN Technologies: Power, RF, Digital and Quantum Applications
• GaN-Based Integrated Optical Devices for Wide-Scenario Sensing Applications
• Phosphor-Converted III-Nitride Nanowire White Light-Emitting Diodes
• Effect of Non-Square Potential Profile on Electron Transport Lifetime in AlxGa1-xAs-Based Double Quantum Well Structures
• A Comprehensive Study on High Electron Mobility Transistors
• Study of DC Characteristics of AlGaN/GaN HEMT and its Compact Models
• An Overview of Reliability Issues and Challenges Associated with AlGaN/GaN HEMT
• Next Generation High-Power Material Ga2O3: Its Properties, Applications, and Challenges
• Investigation of the Impact of Different Dielectrics on the Characteristics of AlN/β-Ga2O3 HEMT
• InAs Raised Buried Oxide SOI-TFET with N-type Si1-xGex Pocket for Low-Power Applications
• SiGe Source-Based Epitaxial Layer-Encapsulated TFET and its Application as a Resistive Load Inverter
• Elimination of the Impact of Trap Charges through Heterodielectric BOX in Nanoribbon FET
• Ge-Channel Nanosheet FinFETs for Nanoscale Mixed Signal Application
• Recent Trends in FET and HEMT-Based Biosensors for Medical Diagnosis
• 2D Material Tungsten Diselenide (WSe2): Its Properties, Applications, and Challenges
• Memristors as Prospective Devices for Silicon and Post-Silicon Eras: Theory, Applications and Perspectives