Engineering of Point Defects in Solids

A Thermodynamic Approach to the Physics of Semiconductors

Sergey V. Bulyarskiy

• Publisher: Elsevier
• Year: 2026
• Topic: Technology & Engineering
• eBook ISBN:
  9780443443060
• Subtopic: Materials Science
• Index: Technology & Engineering

Engineering of Point Defects in Solids: A Thermodynamic Approach to the Physics of Semiconductors covers the theoretical and experimental thermodynamics and kinetics of defect formations in solids, including the formation of complex defects from simple ones. The book describes point defects (vacancies, antistructural, interstitial atoms, and impurities) while also providing algorithms for calculating their defect concentrations, conductivity, and stoichiometric composition. Doping of a substance with impurities, with a focus on germanium and silicon (as common semiconductors), is covered, including retrograde solubility, polytrophy, the solubility of impurities, and the mutual influence of donor and acceptor impurities. The thermodynamics of complex defects formed with the participation of vacancies (divacancies and complexes) are discussed, as is luminescence as a non-destructive method for monitoring the dynamics of changes in the concentration of defects in certain technological processes, with particular attention paid to the phenomenon of electron-photon interaction. Other topics covered include the optical properties of various complexes, compounds with volatile components, analyzing the kinetics of precipitate and nanocrystal formation, and more. - Studies the thermodynamics and kinetics of point defect formation in solids and provides methods for calculating and controlling them, particularly in semiconductors and nano- and microelectronics - Provides algorithms and experimental data for calculating defect concentrations, identifying defect parameters and their influence on the properties of solids - Discusses crystal growth, chemical vapor disposition, atomic layer disposition, magnetron sputtering, and other electronics considerations

Table of contents

• Cover image
• Title page
• Copyright
• Contents
• Preface
• Acknowledgments
• Abstract
• CHAPTER 1 A crystalline solid in a state of equilibrium
• CHAPTER 2 The equilibrium defects concentration calculations by a Gibbs free energy minimization method
• CHAPTER 3 Algorithms for calculating the solubility of impurities in silicon and germanium
• CHAPTER 4 Thermodynamics of vacancies, divacancies, and their complexes in silicon
• CHAPTER 6 Optical and photoelectrical properties of the gallium arsenide complexes
• CHAPTER 7 Thermodynamics of compounds with one volatile component and a wide homogeneity region
• CHAPTER 8 Kinetics of formation and decay of complexes in solids
• CHAPTER 9 Kinetics of formation of nanocrystals, clusters, and precipitates of atoms and molecules in solids
• CHAPTER 10 Oxygen precipitates in silicon modeling and experimental studies
• CHAPTER 11 Solubility of impurities in nanoparticles
• CHAPTER 12 Control of oxygen vacancy concentration in oxides by annealing in an oxygen atmosphere
• Index