Bsim4 And Mosfet Modeling For Ic Simulation

Chenming Hu, Weidong Liu

• Publisher: World Scientific
• Year: 2011
• Print ISBN: 9789812568632, 9789812568632
• eBook ISBN: 9789812813992
• Topic: Biological Sciences
• Subtopic: Science General
• Index: Biological Sciences

This book presents the art of advanced MOSFET modeling for integrated circuit simulation and design. It provides the essential mathematical and physical analyses of all the electrical, mechanical and thermal effects in MOS transistors relevant to the operation of integrated circuits. Particular emphasis is placed on how the BSIM model evolved into the first ever industry standard SPICE MOSFET model for circuit simulation and CMOS technology development.The discussion covers the theory and methodology of how a MOSFET model, or semiconductor device models in general, can be implemented to be robust and efficient, turning device physics theory into a production-worthy SPICE simulation model.Special attention is paid to MOSFET characterization and model parameter extraction methodologies, making the book particularly useful for those interested or already engaged in work in the areas of semiconductor devices, compact modeling for SPICE simulation, and integrated circuit design.

Table of contents

• Contents
• Dedication
• Forword
• Preface
• Chapter 1 BSIM and IC Simulation
• Chapter 2 Fundamental MOSFET Physical Effects and Their Models for BSIM4
• Chapter 3 Channel DC Current and Output Resistance
• Chapter 4 Gate Direct-Tunneling and Body Currents
• Chapter 5 Charge and Capacitance Models
• Chapter 6 Non-Quasi-Static and Parasitic Gate and Body Resistances
• Chapter 7 Noise Models
• Chapter 8 Source and Drain Parasitics: Layout-Dependence Model
• Chapter 9 Junction Diode IV and CV Models
• Chapter 10 SPICE Implementation Example: The Methodology with BSIM4 Transient NQS
• Chapter 11 Multi-Gate Transistor Model
• Index