
- 440 pages
- English
- PDF
- Available on iOS & Android
Iii-nitride Semiconductor Materials
About this book
III-Nitride semiconductor materials — (Al, In, Ga)N — are excellent wide band gap semiconductors very suitable for modern electronic and optoelectronic applications. Remarkable breakthroughs have been achieved recently, and current knowledge and data published have to be modified and upgraded. This book presents the new developments and achievements in the field.Written by renowned experts, the review chapters in this book cover the most important topics and achievements in recent years, discuss progress made by different groups, and suggest future directions. Each chapter also describes the basis of theory or experiment.The III-Nitride-based industry is building up and new economic developments from these materials are promising. It is expected that III-Nitride-based LEDs may replace traditional light bulbs to realize a revolution in lighting. This book is a valuable source of information for engineers, scientists and students working towards such goals.
Frequently asked questions
- Essential is ideal for learners and professionals who enjoy exploring a wide range of subjects. Access the Essential Library with 800,000+ trusted titles and best-sellers across business, personal growth, and the humanities. Includes unlimited reading time and Standard Read Aloud voice.
- Complete: Perfect for advanced learners and researchers needing full, unrestricted access. Unlock 1.4M+ books across hundreds of subjects, including academic and specialized titles. The Complete Plan also includes advanced features like Premium Read Aloud and Research Assistant.
Please note we cannot support devices running on iOS 13 and Android 7 or earlier. Learn more about using the app.
Information
Table of contents
- CONTENTS
- Preface
- Chapter 1 Hydride vapor phase epitaxy of group III nitride materials
- Chapter 2 Planar MOVPE technology for epitaxy of III-nitride materials
- Chapter 3 Close-Coupled Showerhead MOCVD technology for the epitaxy of GaN and related materials
- Chapter 4 Molecular beam epitaxy for III-N materials
- Chapter 5 Growth and properties of nonpolar GaN films and heterostructures
- Chapter 6 Indium-nitride growth by high-pressure CVD: real-time and ex-situ characterization
- Chapter 7 A new look on InN
- Chapter 8 Growth and electrical/optical properties of AlxGa1-xN in the full composition range
- Chapter 9 Optical investigation of InGaN/GaN quantum well structures grown by MOCVD
- Chapter 10 Clustering nanostructures and optical characteristics in InGaN/GaN quantum-well structures with silicon doping
- Chapter 11 III-nitrides micro- and nano-structures
- Chapter 12 New developments in dilute nitride semiconductor research