Advanced Ceramic Materials

Ashutosh Tiwari, Rosario A. Gerhardt, Magdalena Szutkowska, Ashutosh Tiwari, Rosario A. Gerhardt, Magdalena Szutkowska

• Publisher: Wiley-Scrivener
• Year: 2016
• Print ISBN: 9781119242444
• eBook ISBN: 9781119242727
• Edition: 1
• Topic: Technology & Engineering
• Subtopic: Materials Science
• Index: Technology & Engineering

Ceramic materials are inorganic and non-metallic porcelains, tiles, enamels, cements, glasses and refractory bricks. Today, "ceramics" has gained a wider meaning as a new generation of materials influence on our lives; electronics, computers, communications, aerospace and other industries rely on a number of their uses. In general, advanced ceramic materials include electro-ceramics, optoelectronic-ceramics, superconductive ceramics and the more recent development of piezoelectric and dielectric ceramics. They can be considered for their features including mechanical properties, decorative textures, environmental uses, energy applications, as well as their usage in bio-ceramics, composites, functionally graded materials, intelligent ceramics and so on.

Advanced Ceramic Materials brings together a group of subject matter experts who describe innovative methodologies and strategies adopted in the research and development of the advanced ceramic materials. The book is written for readers from diverse backgrounds across chemistry, physics, materials science and engineering, medical science, pharmacy, environmental technology, biotechnology, and biomedical engineering. It offers a comprehensive view of cutting-edge research on ceramic materials and technologies.

Divided into 3 parts concerning design, composites and functionality, the topics discussed include:

• Chemical strategies of epitaxial oxide ceramics nanomaterials
• Biphasic, triphasic and multiphasic calcium orthophosphates
• Microwave assisted processing of advanced ceramic composites
• Continuous fiber reinforced ceramic matrix composites
• Yytria and magnesia doped alumina ceramic
• Oxidation induced crack healing
• SWCNTs vs MWCNTs reinforcement agents
• Organic and inorganic wastes in clay brick production
• Functional tantalum oxides
• Application of silver tin research on hydroxyapatite

Part 1
DESIGN, PROCESSING, AND PROPERTIES

Chapter 1
Development of Epitaxial Oxide Ceramics Nanomaterials Based on Chemical Strategies on Semiconductor Platforms

A. Carretero-Genevrier^1*, R. Bachelet¹, G. Saint-Girons¹, R. Moalla¹, J. M. Vila-Fungueiriño², B. Rivas-Murias², F. Rivadulla², J. Rodriguez-Carvajal³, A. Gomez⁴, J. Gazquez⁴, M. Gich⁴ and N. Mestres⁴

¹Institut des Nanotechnologies de Lyon (INL) CNRS—Ecole Centrale de Lyon, Ecully, France

²Centro de Investigación en Química Biológica y Materiales Moleculares (CIQUS), Universidad de Santiago de Compostela, Santiago de Compostela, Spain

³Institut Laue-Langevin, Grenoble Cedex 9, France

⁴Institut de Ciència de Materials de Barcelona ICMAB, Consejo Superior de Investigaciones Científicas CSIC, Campus UAB Catalonia, Spain

^*Corresponding author: [email protected]

Abstract

The technological impact of combining substrate technologies with the properties of functional advanced oxide ceramics is colossal given its relevant role in the development of novel and more efficient devices. However, the precise control of interfaces and crystallization mechanisms of dissimilar materials at the nanoscale needs to be further developed. As an example, the integration of hybrid structures of high-quality epitaxial oxide films and nanostructures on silicon remains extremely challenging because these materials present major chemical, structural and thermal differences. This book chapter describes the main promising strategies that are being used to accommodate advanced oxide nanostructured ceramics on different technological substrates via chemical solution deposition (CSD) approaches. We will focus on novel examples separated into two main sections: (i) epitaxial ceramic nanomaterials entirely performed by soft chemistry, such as nanostructured piezoelectric quartz thin films on silicon or 1D complex oxide nanostructures epitaxially grown on silicon, and (ii) ceramic materials prepared by combining soft chemistry and physical techniques, such as epitaxial perovskite oxide thin films on silicon using the combination of soft chemistry and molecular beam epitaxy. Consequently, this chapter will cover cutting-edge strategies based on the potential of combining epitaxial growth and CSD to develop oxide ceramics nanomaterials with novel structures and improved physical properties.

Keywords: Epitaxial growth, thin-film growth, silicon, perovskites, solution chemistry, molecular beam epitaxy, oxide nanostructures, magnetic oxide nanowires, quartz thin films, octahedral molecular sieves

1.1 Introduction

Single-crystalline thin films of functional oxides exhibit a rich variety of properties such as ferroelectricity, piezoelectricity, superconductivity, ferro- and antiferro-magnetism, and nonlinear optics that are highly appealing for new electronic, opto-electronic and energy applications [1, 2]. Over the past few years, tremendous progress has been achieved in the growth of functional oxides on oxide substrates (such as LaAlO₃, SrTiO₃, Al₂O₃, MgO, and scandates) [3, 4]. As a result, to date, it is possible to control the epitaxial growth at the unit cell level, which has led to new phenomena arising from the engineering of novel interfaces [5–8]. However, to fully exploit their properties, functional oxides should be effectively integrated on a semiconductor platform like silicon, germanium or III/V substrates, which are compatible with the electronics industry. The controlled epitaxial growth of functional oxide layers on semiconductor substrates is a challenging task as a result of the strong structural, chemical, and thermal dissimilarities existing between these materials. In spite of the difference in lattice parameters and thermal expansion coefficients, the major difficulty to engineer epitaxy is linked to the necessity of preventing the formation of an amorphous interfacial layer during the first stages of the growth (e.g. SiO₂ or silicates on Si, depending of the atmosphere), which hinders any further epitaxy. Additionally, the cations of most oxide compounds can easily interdiffuse into the silicon substrate giving rise to the formation of spurious phases at the interface [9]. To overcome these major challenges, it is required to use a stable buffer layer, which can act simultaneously as a chemical barrier preventing ionic inter-diffusion and as a structural template favoring epitaxy.

In this context, McKee et al. [10] demonstrated the possibility to grow epitaxial SrTiO₃ (STO) films on Si(001) by molecular beam epitaxy (MBE) with Sr passivation strategy. This work sets the basis to integrate STO and related perovskites on silicon for monolithic devices. Consequently, most of the research on crystalline functional oxides such as STO [11], lead zirconate titanate PbZr_0.52Ti_0.48O₃(PZT) [12], BaTiO₃ (BTO) [13–17], LaCoO₃ (LCO) [18], and La_0.7Sr_0.3MnO₃ (LSMO) [19] integrated with Si has been based on an STO buffer layer epitaxially grown on Si(001) by MBE.

For decades, the integration of functional oxides onto a silicon platform has been identified as an important route to improve and widen the performances of microelectronics and nanoelectronics devices. A clear example is the successful preparation of two-dimensional electron gas at interfaces between LaAlO₃ and SrTiO₃ (STO) on Si(001). In this case, the STO film acts simultaneously as a buffer layer and as an active part of the functional heterostrucuture [20]. Moreover, 2D electron gases at the interface have also been demonstrated using LaTiO₃ [21] and GdTiO₃ [22, 23] grown on STO-buffered Si. Functional non-volatile BTO-based ferroelectric tunnel junctions (FTJ) on Si(001) substrates with a tunneling electroresistance (TER) ratio over 10,000% have been recently demonstrated by pulsed laser deposition (PLD) [24] and MBE [25] growth methods. In both cases, this was accomplished by including a thin layer of STO as an epitaxial template on silicon. In addition, concomitant ferroelectric and antiferromagnetic behaviors were demonstrated on single-crystal BiFeO₃ (BFO) films grown on STO on Si(100) using PLD [26] and MBE [27].

Integration of self-assembled vertical epitaxial nanocomposites thin films on Si substrates has been reported for multiferroic or magnetic memory and logic devices. The growth of La_0.7Sr_0.3MnO₃–ZnO perovskite–wurtzite and CeO₂–BTO fluorite–perovskite vertical nanocomposites on a Si substrate by PLD was descri...

Table of contents

• Cover
• Title page
• Copyright page
• Preface
• Part 1: Design, Processing, and Properties
• Part 2: Ceramic Composites: Fundamental and Frontiers
• Part 3: Functional and Applied Ceramics
• Index
• End User License Agreement