ESD

Circuits and Devices

Steven H. Voldman

• Publisher: Wiley
• Year: 2015
• Print ISBN: 9781118954461
• eBook ISBN: 9781118954485
• Edition: 2
• Topic: Technology & Engineering
• Subtopic: Electrical Engineering & Telecommunications
• Index: Technology & Engineering

ESD: Circuits and Devices 2nd Edition provides a clear picture of layout and design of digital, analog, radio frequency (RF) and power applications for protection from electrostatic discharge (ESD), electrical overstress (EOS), and latchup phenomena from a generalist perspective and design synthesis practices providing optimum solutions in advanced technologies.

New features in the 2nd edition:

• Expanded treatment of ESD and analog design of passive devices of resistors, capacitors, inductors, and active devices of diodes, bipolar junction transistors, MOSFETs, and FINFETs.
• Increased focus on ESD power clamps for power rails for CMOS, Bipolar, and BiCMOS.
• Co-synthesizing of semiconductor chip architecture and floor planning with ESD design practices for analog, and mixed signal applications
• Illustrates the influence of analog design practices on ESD design circuitry, from integration, synthesis and layout, to symmetry, matching, inter-digitation, and common centroid techniques.
• Increased emphasis on system-level testing conforming to IEC 61000-4-2 and IEC 61000-4-5.
• Improved coverage of low-capacitance ESD, scaling of devices and oxide scaling challenges.

ESD: Circuits and Devices 2nd Edition is an essential reference to ESD, circuit & semiconductor engineers and quality, reliability &analysis engineers. It is also useful for graduate and undergraduate students in electrical engineering, semiconductor sciences, microelectronics and IC design.

1
Electrostatic Discharge

1.1 Electricity and Electrostatic Discharge

Electricity and electrostatic discharge (ESD) have been known for many years. Today, ESD is a key issue in micro- and nanoelectronics with the scaling of semiconductor components. In this text, the focus will be toward electronic components and electronic systems.

1.1.1 Electricity and Electrostatics

In the field of electricity, electrostatics, and circuit theory, there are many discoveries and accomplishments that have lead to the foundation of the field of ESD phenomenon. Provided here is a chronological list of key events that moved the field of electrostatics forward:

• 600 B.C.: Thales of Miletus discovers electrostatic attraction.
• 1600 A.D.: William Gilbert proposes the “electric fluid” model.
• 1620 A.D.: Niccolo Cabeo discusses “attractive” and “repulsive” phenomena.
• 1729 A.D.: Stephen Gray demonstrates “electricity” can be transferred by wires.
• 1733 A.D.: Charles Francois du Fay discusses two kinds of electricity—“resinous” and “vitreous.”
• 1749 A.D.: Abbey Jean-Antoine Nollet invents the two-fluid model of electricity.
• 1745 A.D.: Pieter Van Musschenbroeck invents the Leyden jar or the capacitor.
• 1747 A.D.: Benjamin Franklin proposes single-fluid model, with “positive” and “negative” charge.
• 1748 A.D.: Sir William Watson develops the first “glow discharge.”
• 1759 A.D.: Francis Ulrich Theodore Aepinus discusses “charging by induction.”
• 1766 A.D.: Joseph Priestley deduces the electric force following an inverse square law.
• 1775 A.D.: Henry Cavendish invents the concept of capacitance and resistance.
• 1785 A.D.: Charles Augustin Coulomb verifies the inverse square law relationship.
• 1812 A.D.: Simeon Denis Poisson demonstrates that charge resides on the surface of a conductor.
• 1821 A.D.: Humphrey Davy establishes the geometrical and thermal effects of resistance.
• 1826 A.D.: Ohm develops the relationship between potential, resistance, and current.
• 1837 A.D.: Michael Faraday discovers the concept of dielectric constants in materials.
• 1841 A.D.: James Prescott Joule shows relationship of electrical current and thermal heating.
• 1848 A.D.: Gustav Kirchoff extends the concept of Ohm’s law.
• 1873 A.D.: James Clerk Maxwell publishes the work Treatise of Electricity and Magnetism.
• 1889 A.D.: Paschen establishes a relationship explaining the electrical breakdown of gases.
• 1906 A.D.: Toepler establishes a relationship for arc resistance in a discharge process.
• 1915 A.D.: Townsend explains avalanche phenomena in materials.

1.1.2 Electrostatic Discharge

In the field of ESD, accomplishments to advance the field of ESD phenomena are in the form of development of experimental discovery and analytical models, introduction of new semiconductor devices and circuits and test equipment, as well as the development of ESD standards. Provided here is a short chronological list of key events that moved the field of ESD:

• 1968 A.D.: D. Wunsch and R.R. Bell introduce the power-to-failure electrothermal model in the thermal diffusion time constant regime [1].
• 1970 A.D.: D. Tasca develops the power-to-failure electrothermal model in the adiabatic and steady-state time constant regime [2].
• 1971 A.D.: V. A. Vlasov and V. F. Sinkevitch develop a physical model for electrothermal failure of semiconductor devices [3].
• 1972 A.D.: W.D. Brown evaluates semiconductor devices under high-amplitude current conditions [4].
• 1981 A.D.: J. Smith and W.R. Littau develop an electrothermal model for resistors in the thermal diffusion time regime [5].
• 1981 a.d.: E. W. Enlow, P.R. Alexander, D. Pierce, and R. Mason address the statistical variation of the power-to-failure of bipolar transistors due to semiconductor manufacturing process and ESD event variations [6–8].
• 1983 A.D.: M. Ash evaluates the nonlinear nature of the power threshold and the temperature dependence of the physical parameters establishing the Ash relationship [9].
• 1983 A.D.: V.I. Arkihpov, E. R. Astvatsaturyan, V.I. Godovosyn, and A.I. Rudenko derive the cylindrical nature of the electrocurrent constriction [10].
• 1985 A.D.: T.J. Maloney and N. Khurana discuss transmission line pulse (TLP) testing as a method for semiconductor I–V characterization and modeling [11].
• 1989 A.D.: V.M. Dwye...

Table of contents

• Cover
• Title page
• Table of Contents
• About the Author
• Preface
• Acknowledgments
• 1 Electrostatic Discharge
• 2 Design Synthesis
• 3 MOSFET ESD Design
• 4 ESD Design: Diode Design
• 5 ESD Design: Passive Resistors
• 6 Passives for Digital, Analog, and RF Applications
• 7 Off-Chip Drivers and ESD
• 8 Receiver Circuits
• 9 Silicon on Insulator (SOI) ESD Design
• 10 ESD Circuits
• 11 ESD Power Clamps
• 12 Bipolar ESD Power Clamps
• 13 Silicon-Controlled Rectifier Power Clamps
• Glossary of Terms
• Standards
• Index
• End User License Agreement